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The prices below are subject to change without notice.

The current 610 RTP oven design is limited to the Time at Temperature limits listed below. High Temperature processing has many “Ins and Outs” of strategies and compromises.  Be sure to let Allwin21 know the details of your process requirements. With the current oven design, customers wanting to use the 1050C to 1250C range of processing need to let Allwin21 know…

Time (sec) — the amount of time to elapse for this step. …

 Combines the DC or RF sputtering and the RF etching operations. While DC or RF power is applied to the target, a small amount of RF is also applied to the substrate table. As a result, the substrate and target are both bombarded by ions ( the substrate to a lesser extent than the target ).…

Essentially the reverse process of RF diode sputter deposition, in which the substrate table becomes the cathode (negative pole) and the target assembly becomes the anode (positive pole). Under these circumstances, surface material from the substrates is ejected. Surface impurities are ejected along with substrates material, making this process useful for pre-cleaning substrate prior to sputter deposition.…

Some metals, such as nitrides and oxides, are best deposited by this method: the target is the parent metal and a small amount of nitrogen or oxygen is introduced into the process chamber along with the argon sputtering gas. Because ionized gases are typically highly reactive, a film deposited in a mixture of argon and a reactive gas will often form a compound with the reactive gas (e.g.,…

Sometimes called co-sputtering or dual deposition, co-deposition is identical in principle and practice to other types of sputter deposition, except that two targets (typically of different materials) are simultaneously activated. Substrates passing sequentially and repeatedly beneath the targets are coated with alternating, very thin films of two materials.…

1. Installation and Training on customer site
2. Multiple Process Gases (Up to 6) and MFCs
3. Patented ERP Pyrometer (400-1250°C) as non-contact high temperature sensor
4. A5-1006-02 Shielded TC probe assembly and A4-1010-01-SiC Cap for 150-1050°C
5. 2 TC terminals. NOT RECOMMENDED
6. Chiller for ERP Pyrometer
7. TC Wafer, Single Point for Pyrometer calibration
8. Omega Meter for Pyrometer calibration
9. Vacuum Function-AW820V.

1. Q: Which model should I purchase?
A: Normally your biggest substrate size determines the model. AccuThermo AW610M is up to 6 inch; AccuThermo AW810M, AccuThermo AW820M, AccuThermo AW820V (NOT RECOMMENDED) are up to 8 inch.

2.…

A GaAs, InP,GaN, GaInP, SiC and other compound semiconductor wafers are very expensive and it is difficult to get a good ohmic contact region. Thus, it is easy to ruin one of these wafers. Therefore, the yield can be very low if adequate precautions are not taken.…

Please help fill in the following RFQs at our website for suitable RTP, Asher, Etcher, Sputtering Deposition, Metal Thin Film Metrology  System, Used Equipment Upgrade Kit model and configuration for your applications. We will provide an official quotation accordingly.…