Typical compound semiconductor applications use 1°C to 50°C/sec depending on process, substrate size, substrate material, automatic handling configuration, and susceptor configuration.

AW820R standard configuration uses pyrometer temperature measurement optimized for production-oriented RTP applications. Lower-temperature RTP applications below approximately 400°C typically require optional thermocouple-based temperature measurement configuration. Because thermocouple assembly installation and removal in automatic RTP systems can require additional handling experience and process changeover effort, some production customers may prefer separate RTP systems for lower-temperature thermocouple-based processes and higher-temperature pyrometer-based processes.

Typical RTP applications use approximately 1 to 600 seconds per recipe step. Actual process duration depends on process temperature, substrate type, process gas, recipe requirements, and automatic wafer handling sequence.

Actual cooling rate is temperature- and substrate-dependent. Cooling can be fast at high temperature and gradually decreases at lower temperature, especially below approximately 200°C. For higher-throughput automatic RTP production applications, some customers may use automatic hot-wafer transfer to an external cooling station instead of waiting for full chamber cooling to room temperature.

Actual pyrometer temperature measurement accuracy and repeatability depend on substrate emissivity, wafer backside condition, process temperature, pyrometer calibration condition, chamber configuration, process recipe, and overall RTP process stability.

Based on wafer-to-wafer repeatability test under controlled process conditions. Actual repeatability depends on substrate, fixture, sensor configuration, process recipe, and facility stability.

Based on one-sigma deviation from 100 Å oxide uniformity measurements. RTP performance is application dependent and should be confirmed by final process requirements and acceptance criteria.

Typical gases include N₂, O₂, Ar, He, forming gas, NH₃, and N₂O. Process gases should be regulated to 30 PSIG and pre-filtered to 1 micron.

Actual throughput depends on wafer size, process temperature, process duration, cooling requirements, wafer handling configuration, susceptor configuration, and application sensitivity. Longer compound semiconductor RTP processes and applications requiring tighter process control may result in lower throughput compared with shorter RTP cycles.

Supports selected 3”, 4”, 5”, 6”, and 8” / 200 mm wafer configurations depending on cassette, robot end-effector, quartz tray, susceptor, and automation configuration. Final wafer size support must be confirmed before order placement.

The AW820R uses an integrated robotic wafer handling architecture designed directly into the RTP platform. The standard automation configuration may include cassette station, wafer centering / cooling station, robot transfer mechanism, and application-specific quartz tray or susceptor handling configuration. For compound semiconductor and high-value wafer applications, special wafer handling configurations may be reviewed, including fragile-wafer handling, thin-wafer handling, application-specific robot end-effector design, susceptor loading / unloading support, dual-susceptor staging for longer RTP processes, and hot-wafer transfer to an external cooling station when higher production throughput is required. In some production applications, wafers may be transferred out at elevated temperature, such as around 200°C or above depending on process and handling configuration, instead of waiting for full chamber cooling to room temperature. Final wafer handling configuration depends on wafer size, thickness, bow, substrate material, susceptor selection, process temperature, cooling requirement, and throughput target.

Includes top and bottom high-intensity infrared lamp heating, diffuse gold-coated reflector architecture, isolated quartz process tube design, and independent 10-zone lamp-bank control with recipe-level lamp factor adjustment. The crossing lamp structure provides improved thermal tuning capability for automatic RTP applications and sensitive compound semiconductor processes. The standard double O-ring chamber sealing structure provides additional O₂ protection capability for oxygen-sensitive RTP applications.

Includes automated RTP main frame, embedded industrial control computer for reduced ESD risk, integrated robotic wafer handling control architecture, cassette station, wafer centering / cooling station, touchscreen monitor, EMO, exhaust cooling fans, main control electronics, AC/DC power supplies, gas control assembly with MFCs, cooling water and CDA gauges, meters, valves, and switches. Additional production-oriented safety and monitoring features may include smoke detect sensor, water leak sensors, input and return cooling-water pressure meters, bypass cooling-water line, and application-dependent system monitoring configurations for improved long-term production reliability and serviceability.

Isolated quartz tube design optimized for a wide range of RTP applications and contamination control.

Standard quartz tray configurations are available for selected round wafers from 3” to 4”, 4” to 6”, and 6” to 8” substrate ranges depending on automation configuration and wafer handling requirements. Standard square substrate quartz tray configurations are also available for selected substrate sizes including approximately 150 × 150 mm and 200 × 200 mm class substrates. Final quartz tray configuration depends on substrate size, shape, thickness, wafer bow condition, process temperature, automation configuration, robot end-effector configuration, susceptor selection, and application-specific wafer handling requirements.

AW820R standard configuration uses non-contact pyrometer temperature measurement for automatic RTP applications from approximately 400°C to 1250°C. Typical pyrometer measurement repeatability may reach approximately ±1°C under controlled process conditions depending on wafer emissivity, substrate surface condition, process temperature, calibration condition, and process configuration. Compared with contact thermocouple measurement, non-contact pyrometer temperature measurement is commonly preferred for automatic production RTP applications because of faster thermal response, reduced contamination risk, reduced sensor-contact issues, and better long-term repeatability potential at higher temperatures.

Includes backup software, installation manual, operation manual, service manual, facility connection drawings, and AW820R schematics.

Optional thin-wire T-shape K-type thermocouple configuration may be reviewed for selected RTP applications, typically below approximately 400°C, depending on process conditions, substrate type, and wafer handling configuration.

AW820R normally uses standard non-contact pyrometer temperature measurement for automatic production RTP applications because non-contact measurement is generally preferred for fast thermal response, repeatability, reduced contamination risk, and long-term stability at higher temperatures.

K-type thermocouple measurement remains commonly used for selected lower-temperature RTP applications and process development depending on process goals and customer preference.

IMPORTANT: Thermocouple installation, replacement, and handling on automatic RTP systems require proper experience because incorrect handling may damage the thermocouple assembly or affect process repeatability.

Additional process gas lines are available with optional shut-off valves, gas routing configurations, and application-specific gas configurations.

Special robot end-effector configurations are available for fragile substrates and compound semiconductor applications, including successful handling experience for ultra-thin wafers down to approximately 50–100 µm thickness. For longer RTP processes, optional dual-susceptor staging configurations may reduce transfer idle time and improve production throughput by preparing the next wafer/susceptor assembly outside the RTP chamber during processing. Optional high-temperature wafer handling configurations may also be reviewed for selected applications where wafers are transferred out at elevated temperature, commonly around 200°C or above depending on wafer type and handling configuration, instead of waiting for full chamber cooling to room temperature. This production strategy may help reduce cycle time and improve throughput for selected compound semiconductor RTP applications. Final handling capability depends on wafer size, wafer bow condition, substrate material, process temperature, cooling requirement, robot end-effector configuration, and application-specific process conditions.

AW820R is a single-wafer automatic RTP system. Susceptor configuration selection depends on substrate material, transparency to IR heating, wafer backside condition, patterned or metal-coated surface condition, process sensitivity, repeatability requirements, ramp-rate requirements, and throughput goals.

Susceptor base-only or susceptor base + lid configurations are available depending on application requirements. For many automatic RTP applications, susceptor base + lid configurations are commonly recommended for improved thermal repeatability, wafer-to-wafer consistency, and process uniformity.

Optional dual-susceptor staging station configurations are also available for longer RTP processes, commonly around 2–5 minutes or longer. While one wafer/susceptor assembly is being processed inside the RTP chamber, the next wafer can be prepared on the second susceptor outside the chamber to reduce idle transfer time and improve production throughput.

Optional high-temperature wafer handling configurations may also be reviewed for selected applications where wafers may be transferred out of the RTP chamber at elevated temperatures instead of waiting for full cooling to room temperature.

Standard long-term qualified graphite susceptors with SiC coating are recommended for best RTP repeatability, stability, and long-term reliability. Allwin21 generally does not recommend unqualified alternative susceptor materials because long-term supply stability, contamination risk, coating quality, and repeatability performance may vary significantly depending on vendor and material quality.

Custom quartz tray and handling configurations are available for special wafer configurations, thin wafers, fragile substrates, bowed wafers, non-standard substrate formats, and application-specific process requirements after engineering review.

AW820R standard chamber configuration includes double O-ring sealing for improved process protection. For applications requiring additional atmosphere monitoring, an optional O₂ sensor / analyzer can be added depending on final system configuration.

This combination provides a two-layer protection concept: mechanical chamber sealing from the standard double O-ring design, plus process atmosphere monitoring from the optional O₂ sensor / analyzer.

O₂ monitoring is commonly considered for sensitive compound semiconductor applications, oxygen-sensitive thermal processes, and high-value wafer production where process stability, wafer protection, and risk reduction are important.

For many RTP applications, practical process repeatability, gas purity, and stable chamber conditions are often more important than pursuing extremely low oxygen levels alone.

Worldwide engineering support, startup assistance, RTP training, process discussion, remote support, and field service are available depending on customer requirements.

Supports communication with factory automation systems and fab host / MES integration when required.

Supports integration with selected SMIF wafer loading systems for automated wafer transfer and factory automation applications. Allwin21 can supply selected SMIF wafer loader configurations, or customer-specified standard SMIF systems may be integrated depending on customer fab standards and configuration requirements. Allwin21 control software can communicate with compatible wafer loading systems through GEM/SECS communication architecture for integrated automatic operation and factory host / MES coordination depending on final configuration.