Allwin21 Corp. is the exclusive licensed manufacturer of AG Associates Heatpulse 610 Rapid Thermal Processing tool.
The AccuThermo AW610M (Video) is a rapid thermal processing (RTP) system, which uses high intensity visible radiation to heat single wafers for short process periods of time at precisely controlled temperatures. The process periods are typically 1‑600 seconds in duration, although periods of up to 9999 seconds can be selected.
These capabilities, combined with the heating chamber’s cold-wall design and superior heating uniformity, provide significant advantages over conventional furnace processing.
The AccuThermo RTP AW 610M rapid thermal annealing system consists of an oven unit and a controller computer running the Allwin21 RTAPRO controller software. The wafer to be processed is placed on a quartz tray that slides into a quartz isolation tube in the oven unit. Four banks of lamps, two above the quartz tube and two below it, provide the source of energy for heating the wafer. The lamps can be controlled manually and automatically from the controller computer.
The RTAPRO control software allows full control and diagnostics of the AccuThermo RTP system. In addition, it allows the creation of recipes for automated control of the temperature and, optionally, process gas flow.
The control software uses a set of operating instructions known as recipes to automatically control the AccuThermo RTP system. These recipes are created by the Process Engineer to monitor and control the parameters of the processing cycle. The Operator then uses the software to select and run the process parameters (steady state temperature, process time, ramp rates, etc.).
The RTAPRO software is also used to create, delete, copy, modify and store the recipes and to execute system diagnostics.
AccuThermo AW 610M Key Features:
Heating chamber’s cold-wall design with gold plating finish which has been approved in 30 years (►).
Atmospheric Rapid Thermal Annealing system with Top and bottom IR lamp heating for superior heating uniformity (►).
Closed-loop temperature control with pyrometer (No-Contact) or thermocouple temperature sensing (►).
Precise time-temperature profiles tailored to suit specific process requirements (►).
Fast heating and cooling rates unobtainable with conventional technologies.
Consistent wafer-to-wafer process cycle repeatability which is the most important characteristic of rapid thermal annealing systems.
Bottom and top heating with 21 (1.2KW ea) Radiation heating lamp module with 6 bank zones.
24V valves for cooling air and water.
Pentium® class computer board inside the equipment with a 17-inch LCD monitor and Allwin21 Corp proprietary software package
New type water sensor which is more reliable.
SSR Lamp control instead of triac control.
Elimination of external contamination with isolated quartz tube.
Small footprint and energy efficiency:26(W) X 14(D) X 18(H) inch
Software which integrates all of the Process Control into a single reliable software package (►).
Power summary function for better performance repeatability control (►).
More IO AD DA hardware exposed for easier maintenance and trouble shooting (►)
The watchdog timer shuts down the lamps to prevent run-away heating of the wafer.
Applications
The AccuThermo RTP system is a versatile tool that is useful for many applications:
Ion Implant Activation
Polysilicon Annealing
Oxide Reflow
Silicide Formation
Contact Alloying
Oxidation and Nitridation
GaAs Processing
Heating, Cooling, and Temperature Measurement
The following list contains the key features of the AccuThermo AW 610M RTP system heating, cooling and temperature measurement systems:
High-intensity visible radiation heats wafers for short periods of 1 to 9999 seconds at precisely controlled temperatures in the 400°C to 1200°C range. (1 to 600 second heating periods are used typically.)
Tungsten halogen lamps and cold heating chamber walls respectively allow fast wafer heating and cooling rates.
The system delivers time and temperature profiles tailored to suit specific process requirements.
Pyrometer or thermocouple sensing offers precise closed-loop temperature control.
Cooling N2 flows around the lamps and quartz isolation tube
MFC controlled gases (up to four) flow through the heating chamber for purge and/or process purposes.
AccuThermo AW 610M Basic Configuration:
AccuThermo AW610M Main Frame with wires.
Aluminum chamber with water cooling and gold plating.
Isolated Quartz Tube With/without window.
Oven control board and main control board
Bottom and top heating with 21 (1.2 KW ea, TOP 10 lamps, BOTTOM 11 lamps) Radiation heating lamp module with 6 bank zones .
ZONE( 3 ), TOP Front ( 3 ) lamps
ZONE( 4 ), TOP Center ( 4 ) lamps
ZONE( 5 ), TOP Rear ( 3 ) lamps
ZONE( 6 ), BOTTOM Front ( 4 ) lamps
ZONE( 7 ), BOTTOM Center ( 3 ) lamps
ZONE( 8 ), BOTTOM Rear ( 4 ) lamps
Quartz Tray for 2 to 4 inch or 4 to 6 inch round (or square) wafer
MFCs: 6 gas lines with 1-6 MFCs. Optional.
Computer Board with AW Software, 17” LCD Monitor, Mouse, Standard Keyboard
T Shape Quartz with TC and one Quartz holder for 100-800°C
One package of 5 pieces of thermocouple wires
One USB with original Software backup
AccuThermo AW 610M Options:
[contact-form-7 404 "Not Found"]
AccuThermo AW 610M Specification:
Wafer handling: Manual loading of wafer into the oven, single wafer processing.
Wafer sizes: 2″, 3″, 4″ ,5″ , 6″ wafers.
Ramp up rate: Programmable, 10°C to 200°C per second.
Recommended steady state duration: 0-300 seconds per step.
Ramp down rate: Programmable, 10°C to 250°C per second. Ramp down rate is temperature-and-radiation-dependent and the maximum is 125°C per second.
Recommended steady state temperature range: 150°C – 1150°C
ERP temperature accuracy: ±1°C, when calibrated against an instrumented thermocouple wafer (ITC).
Thermocouple temperature accuracy: ±0.5°C
Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer. (Repetition specifications are based on a 100-wafer set.)
Temperature uniformity: ±5°C across a 6″ (150 mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.) For a titanium silicide process, no more than 4% increase in non-uniformity during the first anneal at 650°C to 700°C.
Process/Purge gas inputs: Any inert and/or non-toxic gas regulated to 30 PSIG and pre-filtered to 1 micron. Typically, Nitrogen (N2), oxygen (O2), argon (Ar), and/or helium (He) are used.
AccuThermo AW 610M Gallery:
AccuThermo AW 610 – Single Gas Line Basic Configuration
AccuThermo AW 610 – Mutiple Gas Lines – Optional
AccuThermo AW 610 Top and Bottom IR Lamp Heating
30 years approved chamber design from AG Associates
Closed-loop temperature control with pyrometer or thermocouple temperature sensing
Allwin21 Advanced Software which integrates all of the Process Control into a single reliable software package
Precise time-temperature profiles tailored to suit specific process requirements
Process Data Analysis
Real-Time Control & Data
Real-Time process data acquisition
GUI interface
Recipe Editor for Multi-step Processing
System Diagnostics function
Power summary function for better performance repeatability control
Easy software wafer pyrometer calibration
RTP Chamber Calibration Data for smooth process controll
Process Data and Recipe storage on a hard drive
More I/O A/D D/A hardware “exposed” for easier maintenance and trouble shooting
Easy software thermocouple calibration
Easy software gas calibration
Easy Recipe Editor
AccuThermo AW 610M Facility:
1. Dimension and Weight
Equipment
Diminsions
Weight
1 to 6 gas lines
18 H x 26 W x 14 D inch
150 LBS
Pyrometer Chiller
28 H x 11 W x 19 D inch
50 LBS
2. Air Conditioning: The moisture in the ambient air around the AccuThermo RTP should not condense on any part of the system. Temperature is 20-30°C and humidity is Non-condensing.
3. Electrical
Power requirements vary between the United States, Europe and Japan. It also varies if the system is constructed as a single phase or 3-phase unit. Specifications for each are shown in the tables below.
Single Phase Requirements
USA
voltage:
208 VAC (240 VAC optional)
# phases:
single phase
# wires:
2 supply and 1 ground
current:
90 Amp maximum power consumption
frequency:
60 Hz
Europe
voltage:
220 VAC (240 VAC optional)
# phases:
single phase
# wires:
2 supply and 1 ground
current:
90 Amp maximum power consumption
frequency:
50 Hz
Japan
voltage:
200 VAC
# phases:
single phase
# wires:
2 supply and 1 ground
current:
90 Amp maximum power consumption
frequency:
50/60 Hz
3-Phase Requirements
USA
voltage:
208 VAC (240 VAC optional)
# phases:
3-phase
# wires:
3 supply and 1 ground
current:
50 Amp maximum power consumption
frequency:
60 Hz
Europe
voltage:
380 VAC (415 VAC optional)
# phases:
3-phase
# wires:
3 supply and 1 ground
current:
50 Amp maximum power consumption
frequency:
50 Hz
Japan
voltage:
200 VAC
# phases:
3-phase
# wires:
3 supply and 1 ground
current:
50 Amp maximum power consumption
frequency:
50/60 Hz
Separate power distribution box with slow trip circuit breakers are required.
Locate the separate power disconnect box within easy reach.
Total AC power line length should not exceed 25 feet
An isolation transformer is recommended to reduce interference to other equipment.
Accessories Requirements
Specification
Equipment
Voltage
Frequency
Current
Notes
USA
Chiller
110-120
60 Hz
11 A
1
Computer
110-120
60 Hz
Variable
2
Europe
Chiller
220-240
50 Hz
5.5 A
1
Computer
220-240
50 Hz
Variable
2
Japan
Chiller
100
50/60 Hz
11 A
1
Computer
100
50/60 Hz
Variable
2
Note 1: 2 supply wires and 1 ground wire
Note 2: Computer current will be dependent upon the computer manufacturer.
4. Cooling
The heating chamber incorporates three cooling subsystems:
A nitrogen or air cooling system to reduce residual heating of the quartz isolation tube and lamps.
A water cooling system for the chamber walls and door.
A closed loop pyrometer cooling system, to maintain the pyrometer at a constant temperature.
The chamber cooling system operates during any period when power is applied to the lamps and must remain operational for 5 minutes after lamp power has been removed. The air system provides a continual flow through the system cabinet, around the lamps and the quartz isolation tube. This eliminates residual heat from the chamber. The pyrometer cooling system operates continuously, whenever power is applied to the pyrometer chiller, to stabilize and maintain the temperature of the pyrometer.
Quartz Isolation Tube and Pneumatic
Cooling Air
type: Nitrogen (N2) or Clean-Dry-Air (CDA) oil‑and-water-free, filtered to 3 microns
flow rate: 10-15 scfm (283-425 slpm) minimum
inlet pressure:40 psig (300 kPa) typical
fitting: 3/8″ Parker Push-Loktubing ,3/8″ OD nylon tubing
Oven
Cooling Water type:100% distilled water
Cooling Capability: >=3KW depending your maximum process temperature and steady time.
ISO 3696 Grade 1 (resistivity at < 10 MOhm-cm corrected to 25°C)
pre-filtered with conventional particulate filter to 100 microns (No DI Water)
flow rate100 scfm (3000slpm)fitting4″ exhaust vent connected to house exhaust system
Gas Box
Exhaust
(optional)flow rate100 scfm (3000slpm)fitting4″ exhaust vent connected to house exhaust system
FAQ on Rapid Thermal Annealing Systems:
1. Q: Which model should I purchase? A: Normally your biggest substrate size determines the model. AW 610M is up to 6 inch; AW 810,AW 820, AW 820V are up to 8 inch.
2. Q: Can I use AW 610M,AW 810 for 2 inch substrate? A: Yes. You can run 4 pieces of 2 inch on AW 610M and 16 pieces of 2 inch on AW 810 in one batch.
3. Q: Which type of RTP should I purchase, Atmospheric or Vacuum? A: You can run most processes by Atmospheric RTP. Atmospheric RTP has much better performance ( repeatability, stability, uniformity) than vacuum RTP because of atmospheric RTP’s compact chamber design, isolated quartz tube, top&bottom lamp heat, pure gas purge, 30 years approval. The ownership cost and usage cost of Atmospheric RTP are lower. If you are not sure that you have to use vacuum RTP because of O2, you can buy atmospheric RTP with forming gas to get 5 to 12 PPM O2 environment instead of vacuum RTP.
4. Q: What are the differences in Allwin21 vacuum RTPs? A: AW 820V is manual load/unload and is up to 8 inch wafer. It comes with top and bottom lamp heat. The maximum temperature is 1250C @ 10 minutes. AW 826V is automatic system with reliable robotic wafer transfer.
5. Q: Should I have to use susceptor for transparent substrate? A: Normally transparent substrate can not absorb lamp heat since it is transparent. You have to use carrier which can absorb lamp heat and transfer the heat to transparent substrate. Susceptors can be made of SiC, Silica,Graphite,or Si. They can be costly. You can use a Si wafer as carrier if your process is applicable. You can us a Si wafer with pocket, instead of susceptor, if your budget is tight. A susceptor will lower the ramp rate and cooling rate significantly because of its size and thickness.
6. Q: Which material of susceptor should I purchase? A: Traditionally people use graphite with SiC coating for susceptor. Graphite susceptor is for up to 900C with lower ramp rate. Silica susceptor is for up to 1100C with higher ramp rate. Sintered SiC susceptor is for up to 1100C with lower ramp rate. Si susceptor is less expensive and up to 750C with lower ramp rate. The bigger the size of susceptor, the lower the ramp&cooling rate.
7. Q: Should I purchase an ERP Pyrometer as high temperature sensor? A: Thermocouples (TC’s) are the traditional temperature sensor for lower than 1050C. But TC will react with Si wafer at 750C. Our patented ERP Pyrometer can work at 450~1250C with precise measurement after calibration by AW technology. TC has to contact the substrate for temperature measurement while ERP Pyrometer is non-contact. TC cost is lower while ERP Pyrometer’s is higher (more than $15K with calibration tools (TC wafer and omega meter). TC will evaporate at high temperature causing contamination.
8. Q: Can I measure the temperature uniformity by multiple points TC wafer? A: If the temperature is lower than 500C, you can measure the temperature uniformity by TC wafer directly. If the temperature is higher than 500C, you have to measure other parameters’ uniformity to reflect the process uniformity. The influence of lamp, chamber, the structure of TC wafer etc is significant at higher than 500C. Semiconductor industry measures sheet resistance. LED industry measures voltage.
9. Q: Can I have a demo before purchase? A: We have demo systems in our facility in USA. We can do demo one time for you if you can send your wafer to us and our facilities are applicable. But be aware that you cannot evaluate the performance by one demo result because of the following. (1) The demo condition might not be good enough; (2) Your recipe parameters might not be applicable because RTP temperature number in recipe is relative, not real.
10. Q: What is the most important feature for RTP system? A: Repeatability. If the RTP system performance is not repeatable, the RTP will be “Rapid Trash Process”.
11. Q: How many gas lines can Allwin21 RTP come with? A: AW 610M comes with 1 to 6 MFCs. AW 810 comes with 2 to 4 MFCs. AW820,AW 820V,AW826,AW826V come with 1-6 MFCs. Customizing is optional. The popular MFCs are 10 SLM N2, Ar, O2 and 5 SLM NH3, N2O2.
12. Q: Can customer install the RTP by themselves? A: Yes. Our RTP systems are customer-install design. We sold our RTP systems to more than 40 countries. Most customers installed our RTP systems by themselves according to our professional manuals. We provide free technical supports by email, phone, skype etc. We have local reps who can provide 24/7 service in some countries.
13. Q: Why should we purchase an RTP from Allwin21? A: (1) Best repeatability (2) Our system hardware and software technology have been approved based on 30 years of semiconductor industry development. (3) It can cost a lot money and time to test an unpopular or new RTP systems . (4) Allwin21 focuses on RTP as our main business. We professionally provide high quality RTP system and technical support. (5) Reasonable price accepted by 40 countries’ clients. (6) Industry-leading lead time (2 to 4 weeks).
Contact Us for More Information“>KEYWORDS: Rapid Thermal Process, Rapid Thermal Processing, Rapid Thermal Anneal, Rapid Thermal Annealing, Rapid Thermal Oxidation, Rapid Thermal Nitride, RTA, RTP, RTO, RTN,, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, AG210, AG310, AG 410, AG610, AG 610I, AG Associates, Heatpulse 210, Heatpulse 410, Minipulse 310, Heatpulse 610, Heatpulse 610I, AG Heatpulse 410, AG Heatpulse 610, AG Heatpulse 210, AG Minipulse 310, Atmospheric Rapid Thermal Process, Vacuum Rapid Thermal Process, Furnace, Oven, Thermal Furnace, Thermal Process, Thermal Processing,JIPELEC, ag2146,JetClip,JetStar, AST SHS2000, AST STEAG 2800, ssintegration, Rapid Thermal Oxide,JetFirst ,Mattson, annealsys, heatpulse ,ag 2146,Koyo Thermo Systems,AST STEAG-MATTSON 2800, heat pulse, Solaris, Eclipse ,modularpro, RLA-1000, AG Heatpulse, rapid thermal processor, Steag AST SHS2000, Solaris 75, Solaris75,STEAG Electronic Systems ,eng-sol, Annealsys, RLA-3000, Engineering Solutions ，Solaris 150, Rapid Thermal Annealer , AS-Master ,modularpro,RTO ,Modular Process Technology, Solaris150,AS-One,AS-Micro, ADDAX, JetFirst, JetLight, JetStar
