AW-303R Etcher

Manufacturer: Allwin21
Condition: New
Wafer Size: 2″ – 6″ Capability
Wafer Loading: 3-axis Robot
Plasma Power: 13.56MHz Aircooling RF Generator, 300W/600W
Type: Downstream Reactor Structure, Parallel/Single Wafer Process; Stand-Alone
Gas Lines: Up to 3 Lines with MFC, NF3,O2,He

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Downloads: AW-303R (PDF)



    Allwin21 AW-303R Features:

    1. Production-proven plasma etcher system.
    2. Integrated solid robotic wafer handling, Single wafer process.
    3. High selectivity to PR(> 10: 1 Oxide:PR, SiN:Oxide)
    4. Frontside and backside isotropic removal.
    5. Consistent wafer-to-wafer process cycle repeatability.
    6. Temperature control from 20 to 120oC.
    7. 50mm-150mm wafer capability. Up to 6.25” substrate.
    8. Up to 4 wafer size capability without hardware change.
    9. Fixed cassette station and wafer aligner/cooling station.
    10. Can handle 50um thickness wafer.
    11. PC controller with Advanced Allwin21 Software.
    12. Endpoint detection (EOP) with Allwin21 SLOPE technology (Optional).
    13. Up to 3 gas lines with MFC.
    14. Air-Cooled 300W or 600W MKS 13.56 MHz RF Generator
    15. Pressure control with Throttle Valve.
    16. 15-inch Touch screen monitor GUI.
    17. EMO, Interlocks, and Watchdog function.
    18. GEM/SECS II (optional).
    19. Small Footprint: 27”W x 40”D x 59”H (280LBs)
    20. Made in U.S.A.

    Specifications:

    1. Wafer Size: Up to 6.25 inch.
    2. Temperature: 20-120ºC (±2ºC)
    3. Gas Lines: Up to four gas lines with MFCs.
    4. >2000 A/min. Thermo Oxide,>16000A/min.LPCVD Nitride
    5. Uniformity: <±3~5%
    6. Particulate: <0.15 /cm2 (0.3um or greater)
    7. Damage: CV:<0.1V from control; Mobile Ion:<1-2 E10 ; Vt :0% total shift on 98% of points tested no shift >5%
    8. Selectivity: >10:1(Oxide:PR, SiN:Oxide)
    9. MTBF/MTTA/MTTR: 450 Hours/100 Hours/3.5 Hours or Better.
    10. 95% uptime

    Applications:

    • Contact Slope Etch
    • Via Etch
    • BPSG Etch
    • LTO Etch
    • TEOS Etch
    • Thermal Oxide Etch
    • LPCVD Nitride Etch
    • PECVD Nitride Etch
    • Trench Rounding
    • Descum
    • RIE Damage Removal
    • Sodium Removal
    • Planarization
    • Backside Etch (Poly, Nitride, or Oxide)
    • Nitride Pattern Removal (PBL, LOCOS w/ Pad Ox = >400Å)
    • Low Temp Photoresist Ashing over Oxides, Poly, Al, W, Ti, or Moly

    Facilities:

      • Plumbed Process Gases
      • Cooling water: 1GPM house circulating supply @ <23 ± 2°C
      • Facility Exhaust: 100 CFM @ 1” static pressure
      • Vacuum supply for Robot: 11.8”Hg(-5.8psi) / 0.1CFM airflow
      • Power: 190-240VAC, single phase, 30A, 50/60Hz (NEMA L-6-30P plug supplied)

    Matrix and related trademarks belongs to Matrix company.

     

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