AW-303R Etcher

Manufacturer: Allwin21
Condition: New
Wafer Size: 2″ – 6″ Capability
Wafer Loading: 3-axis Robot
Plasma Power: 13.56MHz Aircooling RF Generator, 300W/600W
Type: Downstream Reactor Structure, Parallel/Single Wafer Process; Stand-Alone
Gas Lines: Up to 3 Lines with MFC, NF3,O2,He
Downloads:
AW-303R (PDF)


Allwin21 AW-303R Features:

  1. Production-proven plasma etcher system.
  2. Integrated solid robotic wafer handling, Single wafer process.
  3. High selectivity to PR(> 10: 1 Oxide:PR, SiN:Oxide)
  4. Frontside and backside isotropic removal.
  5. Consistent wafer-to-wafer process cycle repeatability.
  6. Temperature control from 20 to 120oC.
  7. 50mm-150mm wafer capability. Up to 6.25” substrate.
  8. Up to 4 wafer size capability without hardware change.
  9. Fixed cassette station and wafer aligner/cooling station.
  10. Can handle 50um thickness wafer.
  11. PC controller with Advanced Allwin21 Software.
  12. Endpoint detection (EOP) with Allwin21 SLOPE technology (Optional).
  13. Up to 3 gas lines with MFC.
  14. Air-Cooled 300W or 600W MKS 13.56 MHz RF Generator
  15. Pressure control with Throttle Valve.
  16. 15-inch Touch screen monitor GUI.
  17. EMO, Interlocks, and Watchdog function.
  18. GEM/SECS II (optional).
  19. Small Footprint: 27”W x 40”D x 59”H (280LBs)
  20. Made in U.S.A.

Specifications:

  1. Wafer Size: Up to 6.25 inch.
  2. Temperature: 20-120ºC (±2ºC)
  3. Gas Lines: Up to four gas lines with MFCs.
  4. >2000 A/min. Thermo Oxide,>16000A/min.LPCVD Nitride
  5. Uniformity: <±3~5%
  6. Particulate: <0.15 /cm2 (0.3um or greater)
  7. Damage: CV:<0.1V from control; Mobile Ion:<1-2 E10 ; Vt :0% total shift on 98% of points tested no shift >5%
  8. Selectivity: >10:1(Oxide:PR, SiN:Oxide)
  9. MTBF/MTTA/MTTR: 450 Hours/100 Hours/3.5 Hours or Better.
  10. 95% uptime

Applications:

  • Contact Slope Etch
  • Via Etch
  • BPSG Etch
  • LTO Etch
  • TEOS Etch
  • Thermal Oxide Etch
  • LPCVD Nitride Etch
  • PECVD Nitride Etch
  • Trench Rounding
  • Descum
  • RIE Damage Removal
  • Sodium Removal
  • Planarization
  • Backside Etch (Poly, Nitride, or Oxide)
  • Nitride Pattern Removal (PBL, LOCOS w/ Pad Ox = >400Å)
  • Low Temp Photoresist Ashing over Oxides, Poly, Al, W, Ti, or Moly

Facilities:

    • Plumbed Process Gases
    • Cooling water: 1GPM house circulating supply @ <23 ± 2°C
    • Facility Exhaust: 100 CFM @ 1” static pressure
    • Vacuum supply for Robot: 11.8”Hg(-5.8psi) / 0.1CFM airflow
    • Power: 190-240VAC, single phase, 30A, 50/60Hz (NEMA L-6-30P plug supplied)

    Please help fill in the following Customer Survey Form for suitable Plasma Etch RIE model and configuration for your applications.Appreciate your time. Thank you very much.

    1. Your Name(Required):

    2. Your Email(Required):

    3. Your Company Name(Required):

    4. Company Address:

    5. Substrate Sizes(Required):
    small sample1 inch2 inch3 inch4 inch5 inch6 inch6.125 inch6.25 inch8 inch12 inchOthers
    6. Substrate Material(Required):
    SiSiCGaAsGaNGaInPInPOthersNot sure
    7. Etch Material (Required):
    NitrideSilicon DioxidePolysiliconRefractory metal silicidesBarrier-metal/alloysMetal lead(Al,Al-Alloy with silicon)OthersNot sure
    8. What are the highest and lowest process temperature(Required,°C):

    9. What is the Etcher rate specification:

    10. What are the Etcher Uniformity/Repeatability specifications:

    11. Amount of Gas lines(Required):

    12. What are the maximum and minimum RF power watts?

    13. Did you use any Plasma Etcher RIE Equipment which met your requirements? If yes, pls specify brand and model(Required).

    14. Special Requirements:

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