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AccuThermo AW 820 RTP

ByAtmospheric Rapid Thermal Process, Rapid Thermal Process Equipment
Manufacturer: Allwin21 Corp.
Condition: New
Wafer Size: Small~8 inch
Type: Desktop, Atmospheric
Temperature: 100~800°C or 450~1250°C. Long time and Higher temperature processes are available. Pls contact us for detail.

Lamp Zones: 10 from Jan. 2022

Gas Lines: 1 ~ 5 lines
Chamber Design: Allwin21

Free Fast Quote: Link

Downloads:
AccuThermo AW-820 (PDF)

Rapid Thermal Process (PPT)


AccuThermo AW 820 Overview:

The AccuThermo AW820 is a stand alone rapid thermal processing (RTP) system, which uses high intensity visible radiation to heat single wafers for short process periods of time at precisely controlled temperatures. The process periods are typically 1‑1800 seconds in duration, although periods of up to 9999 seconds can be selected.

These capabilities, combined with the heating chamber’s cold-wall design and superior heating uniformity, provide significant advantages over conventional furnace processing.

The AccuThermo RTP AW 820 rapid thermal annealing system consists of an oven unit and a controller computer running the Allwin21 RTAPRO controller software. The wafer to be processed is placed on a quartz tray that slides into a quartz isolation tube in the oven unit. Four banks of lamps, two above the quartz tube and two below it, provide the source of energy for heating the wafer. The lamps can be controlled manually and automatically from the controller computer.

The RTAPRO control software allows full control and diagnostics of the AccuThermo AW 820 RTP system.  In addition, it allows the creation of recipes for automated control of the temperature and, optionally, process gas flow.

The control software uses a set of operating instructions known as recipes to automatically control the AccuThermo RTP system. These recipes are created by the Process Engineer to monitor and control the parameters of the processing cycle. The Operator then uses the software to select and run the process parameters (steady state temperature, process time, ramp rates, etc.).

The RTAPRO software is also used to create, delete, copy, modify and store the recipes and to execute system diagnostics.


AccuThermo AW 820 Key Features:

  • Long time process with big cabinet. Design capability is 60 minutes@1000°C. Recommend 30 minutes@1000°C.
  • Heating chamber’s cold-wall design with gold plating finish which has been approved in 30 years  (►).
  • Atmospheric Rapid Thermal Annealing system with Top and bottom IR lamp heating for superior heating uniformity (►).
  • Closed-loop temperature control with pyrometer (No-Contact) or thermocouple temperature sensing (►).
  • Precise time-temperature profiles tailored to suit specific process requirements (►).
  • Fast heating and cooling rates unobtainable with conventional technologies.
  • Consistent wafer-to-wafer process cycle repeatability which is the most important characteristic of rapid thermal annealing systems.
  • Elimination of external contamination with isolated quartz tube.
  • Small footprint and energy efficiency.
  • Software which integrates all of the Process Control into a single reliable software package (►).
    • GUI interface (►).
    • Real-Time process data acquisition (►).
    • Real-Time graphics (►).
    • Process Data Analysis  (►).
    • Process Data and Recipe storage on a hard drive (►).
    • Recipe Editor for Multi-step Processing (►).
    • Easy Recipe Editor (►).
    • System Diagnostics function (►).
    • Chamber calibration data for smooth control (►).
    • Easy software pyrometer calibration (►)
    • Easy software gas calibration (►)
    • Easy software thermocouple calibration (►)
    • Power summary function for better performance repeatability control (►).
    • More IO AD DA hardware exposed for easier maintenance and trouble shooting (►)
    • The watchdog timer shuts down the lamps to prevent run-away heating of the wafer.

Applications

The AccuThermo RTP system is a versatile tool that is useful for many applications:

  • Ion Implant Activation
  • Polysilicon Annealing
  • Oxide Reflow
  • Silicide Formation
  • Contact Alloying
  • Oxidation and Nitridation
  • GaAs Processing

Heating, Cooling, and Temperature Measurement

The following list contains the key features of the AccuThermo AW 810 RTP system heating, cooling and temperature measurement systems:

  • High-intensity visible radiation heats wafers for short periods of 1 to 9999 seconds at precisely controlled temperatures in the 400°C to 1250°C range. (1 to 1800 second heating periods are used typically.)
  • Tungsten halogen lamps and cold heating chamber walls respectively allow fast wafer heating and cooling rates.
  • The system delivers time and temperature profiles tailored to suit specific process requirements.
  • Pyrometer or thermocouple sensing offers precise closed-loop temperature control.
  • Cooling N2 flows around the lamps and quartz isolation tube
  • MFC controlled gases (up to four) flow through the heating chamber for purge and/or process purposes.

 

AccuThermo AW 820 Basic Configuration:

  1. AW 820 Main Frame with wires.

  2. Aluminum chamber with water cooling and gold plating.

  3. Isolated Quartz Tube without window.

  4. Oven control board and main control board

  5. Bottom and top heating with 27 (1.5 KW ea, TOP 13 lamps, BOTTOM 14 lamps) Radiation heating lamp module with 10 bank zones
    • ZONE1-5, Top, from front to rear
      1.  ZONE( 1 ), TOP ( front )  ( 2 ) lamps
      2.  ZONE( 2 ), TOP (  )  ( 3 ) lamps
      3.  ZONE( 3 ), TOP ( center )  ( 4 ) lamps
      4.  ZONE( 4 ), TOP (  )  ( 3 ) lamps
      5.  ZONE( 5 ), TOP ( rear )  ( 2 ) lamps
    • ZONE6-10, Bottom, from front to rear
      1. ZONE( 6 ), BOTTOM ( front )  ( 2 ) lamps
      2.  ZONE( 7 ), BOTTOM (  )  ( 3 ) lamps
      3.  ZONE( 8 ), BOTTOM ( center )  ( 3 ) lamps
      4.  ZONE( 9 ), BOTTOM (  )  ( 3) lamps
      5.  ZONE( 10 ), BOTTOM ( rear )  ( 2 ) lamps

  6. Quartz Tray for 5 to 8 inch round  wafer

  7. 6 gas lines with 1-6 MFCs. Option.

  8. Computer Board with AW Software, Touch Screen Monitor, Mouse, Standard

  9. T Shape Quartz with TC and one Quartz holder for 100-800°C

  10. One package of 5 pieces of thermocouple wires

  11. One USB with original Software backup

AccuThermo AW 820 Options:

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AccuThermo AW 820 Specifications:

  • Wafer handling:  Manual loading of wafer into the oven, single wafer processing.
  • Wafer sizes: 2″, 3″, 4″ ,5″ , 6″ ,8″ wafers.
  • Ramp up rate:  Programmable, 10°C to 200°C per second.
  • Recommended steady state duration: 0-300 seconds per step.
  • Ramp down rate:  Programmable, 10°C to 250°C per second.  Ramp down rate is temperature-and-radiation-dependent and the maximum is 125°C per second.
  • Recommended steady state temperature range:  150°C – 1150°C
  • ERP temperature accuracy:  ±1°C, when calibrated against an instrumented thermocouple wafer (ITC).
  • Thermocouple temperature accuracy:  ±0.5°C
  • Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer.  (Repetition specifications are based on a 100-wafer set.)
  • Temperature uniformity: ±7°C across a 8″ (200 mm) wafer at 1150°C.  (This is a one sigma deviation 100 angstrom oxide.)  For a titanium silicide process, no more than 7% increase in non-uniformity during the first anneal at 650°C to 700°C.
  • Process/Purge gas inputs: Any inert and/or non-toxic gas regulated to 30 PSIG and pre-filtered to 1 micron.  Typically, Nitrogen (N2), oxygen (O2), argon (Ar), and/or helium (He) are used.

AccuThermo AW 820 Gallery:

AccuThermo AW 820 Facility:

1. Dimension and Weight

Equipment

 Diminsions

Weight
AccuThermo AW 820 70″ H x 39″ W x 42” D 500 LBS
Pyrometer Chiller 28″ H x 10.75″ W x 19″ D 20 LBS

2. Air Conditioning:  The moisture in the ambient air around the AccuThermo RTP should not condense on any part of the system. Temperature is 20-30°C and humidity is Non-condensing.

3. Electrical Connections

Power requirements vary between the United States, Japan and Europe. Specifications for each are shown in the following table. 

Specification

Equipment

Voltage

Frequency

Current

Phases

# Wires

Notes

USA

Oven

208/240

60 Hz

100 A

3

5

1, 2, 3, 4

Chiller

110-120

60 Hz

11 A

1

3

 

Computer

110-120

60 Hz

Variable

1

3

5

Japan

Oven

200

50/60 Hz

100 A

3

5

1, 2, 3, 4

Chiller

100

50/60 Hz

11 A

1

3

 

Computer

100

50/60 Hz

Variable

1

3

5

Europe

Oven

220/240

50 Hz

100 A

3

5

1, 2, 3, 4

Chiller

220-240

50 Hz

5.5 A

1

3

 

Computer

220-240

50 Hz

Variable

1

3

5

Note 1: Use an isolation transformer to reduce interference to other equipment.

Note 2: Locate oven within 25 feet line length of isolation transformer.

Note 3: Locate power-disconnect switch within reach of the system.

Note 4: 3 supply wires, 1 neutral and 1 ground wire

Note 5: Computer current will be dependent upon the computer manufacturer.

 4.0  Cooling, Process Gas and Exhaust Requirements

Oven cooling water, process gas, tube cooling gas, and exhaust requirements are described below: 

Cooling Water type

pre-filtered with conventional particulate filter to 100 microns (No DI or Distilled Water)
flow rate 3 gpm 11.6 lpm minimum
  inlet pressure 30 psig 2.1 kg/cm2 minimum
  40 psig 2.8 kg/cm2 typical
  60 psig 4.2 kg/cm2 maximum
  pressure differential 10 psi 0.7 kg/cm2
  inlet temperature 15 °C minimum
  20 °C (3 °C above dew point) typical
  35 °C maximum
  oven fitting,

inlet and outlet1/2” tube x 3/8” male pipe swagelok pyrometer fittings,

inlet and outlet1/4” swagelok

Quartz Isolation Tube Cooling Air type

Nitrogen (N2) or Clean-Dry-Air (CDA) oil‑and-water-free, filtered to 3 microns
flow rate 10-15 SCFM 283-425 slpm minimum
  inlet pressure 15 psig 1.05 kg/cm2 minimum
  20 psig 1.4 kg/cm2 typical
  30 psig 2.1 kg/cm2 maximum
  fitting 3/8″ Parker Push-Lok . Recommended tubing is 3/8″ OD nylon.
Process Gases type

Any inert and/or non-corrosive gas.

Typically, Nitrogen (N2), oxygen (O2), argon (Ar), and/or helium (He) are used.
pressure 10 psig 0.7 kg/cm2 minimum
  20 psig 1.4 kg/cm2 typical
  30 psig 2.1 kg/cm2 maximum
  flow rate 0-10 SLPM
  filtering pre-filtered to 1 micron
  fitting 1/4″ female VCR fitting
Process Exhaust flow rate 10 slpm
  back pressure

(scrubber draw)–0.5” waterminimum  –0.75” watertypical  –1.0″ watermaximum  fitting

1/4″ female VCR fitting out to building scrubber system

Exhaust

Oven Chassis 20 scfm566 slpm fitting

4″ exhaust vent connected to house exhaust system

Pneumatic Actuation Gas Valve type Clean Dry Air (CDA) or Nitrogen (N2)
Inlet Pressure 80 psig (5.6 kg/cm2) ± 5 psig (0.35 kg/cm2)
Flow Less Than 1 SCFM Typical
fitting 1/4” tube swagelok

FAQ on Rapid Thermal Processing System:

1. Q: Which model should I purchase?
A: Normally your biggest substrate size determines the model. AW 410 is up to 4 inch;AW 610,AW 610V are up to 6 inch; AW 810,AW 820, AW 820V are up to 8 inch.

2. Q: Can I use AW 610,AW 810 for 2 inch substrate?
A: Yes. You can run 4 pieces of 2 inch on AW 610 and 16 pieces of 2 inch on AW 810 in one batch.

3. Q: Which type of RTP should I purchase, Atmospheric or Vacuum?
A: You can run most processes by Atmospheric RTP. Atmospheric RTP has much better performance ( repeatability, stability, uniformity) than vacuum RTP because of atmospheric RTP’s compact chamber design, isolated quartz tube, top&bottom lamp heat, pure gas purge, 30 years approval. The ownership cost and usage cost of Atmospheric RTP are lower. If you are not sure that you have to use vacuum RTP because of O2, you can buy atmospheric RTP with forming gas to get 2 to 12 PPM O2 environment instead of vacuum RTP.

4. Q: What are the differences in Allwin21 vacuum RTPs?
A: AW 610V is up to 6 inch wafer. It comes with only cross top lamp heat. The maximum temperature is 1000C @ 2 minutes. AW 820V is up to 8 inch wafer. It comes with top and bottom lamp heat.The maximum temperature is 1250C @ 10 minutes. AW 860V is automatic system with reliable robotic wafer transfer. AW610V & AW820V are manual loading.

5. Q: Should I have to use susceptor for transparent substrate?
A: Normally transparent substrate can not absorb lamp heat since it is transparent. You have to use carrier which can absorb lamp heat and transfer the heat to transparent substrate. Susceptors can be made of SiC, Silica,Graphite,or Si. They can be costly. You can use a Si wafer as carrier if your process is applicable. You can us a Si wafer with pocket, instead of susceptor, if your budget is tight. A susceptor will lower the ramp rate and cooling rate significantly because of its size and thickness.

6. Q: Which material of susceptor should I purchase?
A: Traditionally people use graphite with SiC coating for susceptor. Graphite susceptor is for up to 900C with lower ramp rate. Silica susceptor is for up to 1100C with higher ramp rate. Sintered SiC susceptor is for up to 1100C with lower ramp rate. Si susceptor is less expensive and up to 750C with lower ramp rate. The bigger the size of susceptor, the lower the ramp&cooling rate.

7. Q: Should I purchase an ERP Pyrometer as high temperature sensor?
A: Thermocouples (TC’s) are the traditional temperature sensor for lower than 1050C. But TC will react with Si wafer at 750C. Our patented ERP Pyrometer can work at 450~1250C with precise measurement after calibration by AW technology. TC has to contact the substrate for temperature measurement while ERP Pyrometer is non-contact. TC cost is lower while ERP Pyrometer’s is higher (more than $15K with calibration tools (TC wafer and omega meter). TC will evaporate at high temperature causing contamination.

8. Q: Can I measure the temperature uniformity by multiple points TC wafer?
A: If the temperature is lower than 500C, you can measure the temperature uniformity by TC wafer directly. If the temperature is higher than 500C, you have to measure other parameters’s uniformity to reflect the process uniformity. The influence of lamp, chamber, the structure of TC wafer etc is significant at higher than 500C. Semiconductor industry measures sheet resistance. LED industry measures voltage.

9. Q: Can I have a demo before purchase?
A: We have demo systems in our facility in USA. We can do demo one time for you if you can send your wafer to us and our facilities are applicable. But be aware that you cannot evaluate the performance by one demo result because of the following. (1) The demo condition might not be good enough; (2) Your recipe parameters might not be applicable because RTP temperature number in recipe is relative, not real.

10. Q: What is the most important feature for RTP system?
A: Repeatability. If the RTP system performance is not repeatable, the RTP will be “Rapid Trash Process”.

11. Q: How many gas lines can Allwin21 RTP come with?
A: AW 410, AW 610 come with 1, or 2 to 4, or 5 to 6. AW 810, AW 820 come with 2 to 4 lines. AW 610V,AW 820V comes with 2 to 3 lines. Customizing is optional. The popular MFCs are 10 SLM N2, Ar, O2 and 5 SLM NH3, N2O2.

12. Q: Can customer install the RTP by themselves?
A: Yes. Our RTP systems are customer-install design. We sold our RTP systems to more than 40 countries. Most customers installed our RTP systems by themselves according to our professional manuals. We provide free technical supports by email, phone, skype etc. We have local reps who can provide 24/7 service in some countries.

13. Q: Why should we purchase an RTP from Allwin21?
A: (1) Best repeatability
(2) Our system hardware and software technology have been approved based on 30 years of semiconductor industry development.
(3) It can cost a lot money and time to test an unpopular or new RTP systems .
(4) Allwin21 focuses on RTP as our main business. We professionally provide high quality RTP system and technical support.
(5) Reasonable price accepted by 40 countries’ clients.
(6) Industry-leading lead time (2 to 4 weeks).

Contact Us for More Information

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