Modular Process Technology Corporation was founded in 1991. Modular Process Technology supplies rapid thermal processing (RTP) solutions for silicon, compound semiconductor, integrated photonics, and MEMS device processing. The Company’s line of business includes manufacturing industrial furnaces and ovens. Models: RTP-600S, MPT RTP-600XP, MPT RTP-800S, MPT RTP-800XP,MPT RTA-3000.
Advanced key features of Upgraded Modular process technology crop MPT RTA-600S, MPT RTA-600XP, MPT RTA-800S, MPT RTA-800XP,MPT RTP-3000 include:
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- New Chasis (if applicable) with new PCBs, wires, PC with AW controller without obsolete parts, with Allwin21 long term support.
- Manual Operation
- Closed-loop temperature control with pyrometer or thermocouple temperature sensing.
- Precise time-temperature profiles tailored to suit specific process requirements.
- High-intensity visible radiation heats wafers for short periods. Fast heating and cooling rates unobtainable in conventional technologies.
- Consistent wafer-to-wafer process cycle repeatability.
- Elimination of external contamination.
- Small footprint and energy efficiency.
- Software calibration and easy to be done.
- More functions and I/O hardware “exposed” for easier maintenance and trouble shooting.
- It is easy to edit recipe with GUI and graph display.
- Save all process data on the computer hard disk.
- A/D and D/A precision is 14 to 16 bits.
- Detect in process and with color curve displayed on the screen.
- Lamp damage detect in process.
- Software watch dog to eliminate machine damage duo to the computer locks up or freeze.
- Sensor status detect function.
- On line help function.
- Option: Add Patented ERP Pyrometer (400-1250°C) as non-contact high temperature sensor.
- Option: Add Double O Ring and/or O2 Sensor/Analyzer for O2 sensitive applications and saving GaAs, InP, GaN, GaInP, SiC and other valuable compound material wafers
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RTP 610 info from website for your reference.
The RTP 610 is a rapid thermal annealer which uses 2 banks of tungsten-halogen lamps to heat thin substrates (up to 6 inches in diameter) very quickly to 400-1100°C. A nitrogen purged chamber with variable flow keeps outside air from coming in during annealing and also during load/unloading.
Temperature may be controlled and monitored by either a thermocouple (at low temperatures of 400-600°C ) or a pyrometer (at higher temperatures of 600-1100°C). NOTE: We will abbreviate thermocouple as TC and pyrometer as pyro in the remainder of this spec. The system is controlled in the automatic mode by a PC/Windows computer.
Samples can be small pieces of substrate or up to 6 inches in diameter and must be clean and free from oils, grease etc. If possible, an RCA or piranha clean is recommended before annealing. Temperatures which cause volatilization (e.g. vapors) of the substrate or film to be annealed MUST BE AVOIDED. This will coat the chamber and cause the pyrometer to be incorrect as well as contaminate the next user’s samples. This chamber may be used for:
- Metal/silicide formation 500-900°C
- III-V ohmic contact anneal 400-650°C
- Ferroelectric/pyroelectric film annealing 400-900°C
High temperature annealing (>650°C) of compound substrates will require special fixturing.
MPT Corp. RTP-600S Rapid Thermal Annealer :The RTP-600S system is an advanced bench-top rapid thermal processing system with multi-gas capabilities. The system processes wafers up to 6″ in diameter. The integrated process control system features real-time graphics, recipe management, data acquisition and display and has a comprehensive diagnostic function. The system is configured for ≤800°C processing with thermocouple and has the option to flow in nitrogen as a process gas.
The RTP-600S system is an advanced bench-top rapid thermal processing system with multi-gas capabilities. The system processes wafers up to 6″ in diameter. The integrated process control system features real-time graphics, recipe management, data acquisition and display and has a comprehensive diagnostic function. The system is configured for ≤800°C processing with thermocouple and has the option to flow in nitrogen as a process gas. Applications: Rapid thermal annealing of thin-films.
MPTC RTP – 600 Rapid Thermal Processor:The MPTC RTP-600 is a compact, single-wafer, desk-top rapid thermal process system that is capable of rapidly heating samples from ambient up to 1200 C. The object features an easily interchangeable quartz heating chamber with closed-loop temperature control and programmable Time-Temperature profiles. The reaction chamber is configured to hold 100 mm wafers. The UTD Cleanroom has two of these objects. One unit is plumbed with nitrogen and oxygen and the other with nitrogen and forming gas.
he MPT RTA is a radiation based rapid thermalization tool capable of processing up to 4” wafers. Offered atmospheric gas ambients include N2 and O2. Controlled temperature capability runs from 300C to 1000C with exposure durations on the scale of minutes. No volatiles, toxics, or glass without permission.
The MPT Rapid Thermal Processer (RTP) is located in the Class-1000 cleanroom. It uses high-intensity visible radiation (tungsten halogen lamps) to heat single wafers (up to 6 inch full wafers or chips) at a rate of 1-200°C per second for short periods of time (1-600 seconds) and hold at precisely controlled temperatures (400°C to 1200°C). Air, Nitrogen, Forming Gas (5% H2 in N2), Oxygen, and Argon gases are used in the process chamber for polysilicon annealing, oxide reflow, contact alloying, and ion implant activation.
Rapid Thermal Processing Oven (RTP).Manufacturer: Modular Process Technology Corp. Model: RTP 600-S Rapid Thermal Processing Oven (RTP)Description: The RTP-600S system is a benchtop rapid thermal processing system. It has multi-gas capabilities and can process wafers up to 6″ in diameter. It can be used for implant activation, contact alloying and silicide formation. Graphite tooling.