AccuThermo AW820RV Automatic Vacuum RTP System
Automatic Vacuum RTP System with Top & Bottom Lamp Heating and Robotic Wafer Handling
Production-Oriented Automatic Vacuum RTP System for up to 8-Inch Wafers
RTP Process Experience
Allwin21 applies RTP process understanding to help customers evaluate atmospheric RTP, vacuum RTP, automatic RTP, susceptor configuration, process gases, and thermal process requirements.
Customer Gets:
Practical model selection and application-oriented process discussion.
10-Zone Lamp Heating Control
The 27-lamp, 10-zone RTP thermal control architecture with independently controlled lamp zone heating provides improved thermal tuning capability, process repeatability, and thermal distribution control for different applications.
Customer Gets:
Flexible thermal tuning for compound semiconductor, metal-film, and susceptor-based RTP applications.
Process-Oriented RTP Software
The RTAPRO software architecture provides improved RTP process visibility, lamp-response monitoring, process troubleshooting capability, and long-term thermal stability management for process and equipment engineers.
Customer Gets:
Better process setup, easier troubleshooting, and more controlled RTP recipe development.
The AW820RV is an automatic vacuum RTP configuration for customers requiring robotic wafer handling together with vacuum pump-down, controlled pressure, or optional higher vacuum capability. It is intended for selected applications where vacuum RTP is justified by the process requirement, not simply by vacuum level alone.
1. Start with the Process Requirement
Vacuum RTP should be selected based on process requirements, not only by vacuum level. Many RTP applications can be processed using controlled atmospheric, nitrogen, argon, oxygen, or forming gas environments without requiring vacuum RTP configuration.
The AW820RV should be considered when the customer needs both automatic wafer handling and vacuum process capability.
Customer Gets:
- More practical RTP model selection
- Avoidance of unnecessary system complexity
- Better matching between process requirement and equipment configuration
2. Automatic Wafer Handling with Vacuum Process Chamber
The AW820RV integrates robotic wafer handling with a vacuum RTP chamber. The configuration may include cassette station, robot transfer mechanism, wafer centering / cooling station, vacuum chamber interface, vacuum valves, pressure monitoring, and application-specific quartz tray or susceptor handling.
Customer Gets:
- Reduced operator involvement
- More repeatable wafer transfer sequence
- Better fit for production-oriented vacuum RTP applications
3. Top & Bottom Lamp Heating
Unlike many conventional vacuum RTP systems using top-side-only heating, the AW820RV uses top and bottom lamp heating architecture. This configuration is useful for compound semiconductor, metal-film, and susceptor-based RTP applications.
Customer Gets:
- More balanced thermal structure
- Support for susceptor base and lid configurations
- Improved flexibility for compound semiconductor processing
4. Shielded TC and Vacuum Pressure Control
Because the AW820RV uses a vacuum chamber structure with thick upper and lower quartz windows, shielded thermocouple temperature control is typically used instead of standard RTP pyrometer temperature control.
Vacuum pressure configuration, pump selection, pressure control method, process gases, susceptor configuration, wafer handling sequence, and cooling strategy should be reviewed together before final configuration.
Customer Gets:
- Temperature control compatible with vacuum chamber structure
- Application-oriented vacuum RTP configuration
- More realistic review of process capability and throughput
Process Results vs. Temperature Uniformity
For RTP applications, direct TC temperature uniformity alone may not represent final process performance. Sheet resistance, film thickness, contact resistance, SEM results, and repeatability often provide more meaningful process evaluation.
Customer Gets:
- Better acceptance criteria
- Less confusion during process development
- More practical RTP evaluation
Atmospheric RTP vs. Vacuum RTP
Many RTP applications do not require vacuum RTP. For many processes, thermal repeatability, gas purity, O₂ / moisture control, chamber design, and process understanding are more important than vacuum level alone. Vacuum RTP systems may also introduce additional contamination sources, increased maintenance complexity, and reduced process repeatability at high temperatures due to chamber structure and cooling requirements.
Customer Gets:
- Avoid unnecessary complexity
- Better model selection
- Practical RTP configuration guidance
Cooling Water Stability
Closed-loop cooling water is recommended for stable RTP chamber cooling and long-term reliability. Because RTP is a high-temperature thermal processing system, a dedicated cooling-water loop is recommended whenever possible. Distilled water is recommended instead of D.I. water for chamber cooling.
Customer Gets:
- Reduced corrosion risk
- More stable chamber behavior
- Better long-term equipment reliability
Susceptor Selection
The appropriate susceptor depends on budget, substrate size, material, thickness, emissivity, wafer bow, backside surface condition, ramp-rate requirements, patterned surface condition, process temperature, throughput, and application requirements. Susceptor size and configuration can also affect achievable ramp rates, thermal repeatability, and process flexibility. Susceptor base or susceptor base + lid configurations may be recommended depending on process sensitivity and wafer surface conditions.
Customer Gets:
- Better process and budget matching
- Reduced wafer handling risk
- Improved thermal repeatability potential
- More suitable RTP configuration for application-specific process needs
| Item | AW820RV Specification |
|---|---|
| Ramp-Up Rate | Programmable from 1°C to 250°C/sec.
More detailsTypical compound semiconductor applications use 1°C to 50°C/sec depending on process, substrate size, substrate material, vacuum pressure, automatic handling configuration, and susceptor configuration.
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| Steady-State Temperature | Typical steady-state range: 150°C to 1050°C.
More detailsMaximum temperature up to 1250°C depending on process conditions, wafer size, susceptor configuration, process gas, vacuum pressure, and system configuration. Long-duration high-temperature processing should be reviewed with Allwin21 before application use, since process safety, chamber condition, utility stability, exhaust configuration, vacuum pump configuration, and facility capability become increasingly important for long-duration RTP operation.
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| Steady-State Duration | 0 to 9999 seconds per recipe step.
More detailsTypical RTP applications use approximately 1 to 600 seconds per recipe step. Actual process duration depends on process temperature, substrate type, process gas, vacuum pressure, recipe requirements, pump-down / purge sequence, wafer handling sequence, and cooling requirements.
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| Ramp-Down Rate | 1°C to 200°C/sec. Programmable within natural cooling capability.
More detailsActual cooling rate is temperature- and substrate-dependent. Cooling can be fast at high temperature and gradually decreases at lower temperature, especially below approximately 200°C. For higher-throughput automatic RTP applications, selected hot-wafer handling or external cooling-station strategies may be reviewed depending on vacuum sequence, wafer type, and safety requirements.
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| Temperature Accuracy | ±1°C under controlled conditions. Shielded TC. |
| Temperature Repeatability | ±1°C or better at 1150°C under controlled conditions.
More detailsBased on wafer-to-wafer repeatability test under controlled process conditions. Actual repeatability depends on substrate, fixture, sensor configuration, vacuum pressure, process recipe, pump-down sequence, and facility stability.
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| Temperature Uniformity | ±8°C across an 8″ / 200 mm wafer at 1150°C.
More detailsBased on one-sigma deviation from 100 Å oxide uniformity measurements. RTP performance is application dependent and should be confirmed by final process requirements and acceptance criteria.
Allwin21 generally recommends using final process results such as sheet resistance, film thickness, contact resistance, device performance, surface condition, or SEM results as meaningful process acceptance criteria.
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| Process / Purge Gases | Supports common RTP process and purge gases.
More detailsTypical gases include N₂, O₂, Ar, He, forming gas, NH₃, and N₂O. Process gases should be regulated to 30 PSIG and pre-filtered to 1 micron. Final gas configuration depends on pressure control method, vacuum pump compatibility, process chemistry, and customer facility standards.
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| Vacuum / Pressure Configuration | Typical 1 to 50 mTorr. Optional high-vacuum configuration.
More detailsTypical low-vacuum RTP configurations are commonly operated approximately in the 1 to 30 mTorr or 1 to 50 mTorr range depending on pump configuration, chamber condition, process gas, pressure-control method, leak rate, and customer application requirements.
Optional turbo-pump configuration may be reviewed for applications requiring higher vacuum capability. Typical high-vacuum configurations may reach approximately 10⁻⁵ to 10⁻⁷ Torr depending on chamber condition, pump configuration, plumbing, valve configuration, leak rate, process gas configuration, and facility setup.
Actual achievable vacuum performance and process suitability are application dependent and should be reviewed together with substrate material, process gas, temperature, susceptor configuration, process sequence, and customer evaluation method.
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| Typical Throughput | Typical production throughput: approximately 5–25 wafers per hour.
More detailsActual throughput depends on wafer size, process temperature, process duration, pump-down time, purge / backfill sequence, cooling requirements, wafer handling configuration, susceptor configuration, and vacuum level requirement. Automatic vacuum RTP should be reviewed based on the customer’s real production target and process sequence.
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| Item | AW820RV Standard Configuration |
|---|---|
| System Type | Automatic single-wafer vacuum RTP / RTA / RTO / RTN system for selected production-oriented vacuum RTP applications. |
| Wafer Handling System | Automatic cassette-based robotic wafer transfer into the vacuum RTP process chamber.More detailsThe AW820RV uses an integrated robotic wafer handling architecture adapted for vacuum RTP operation. Final wafer handling configuration depends on wafer size, thickness, bow, substrate material, susceptor selection, vacuum process sequence, process temperature, cooling requirement, and throughput target.
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| Wafer Size Capability | Supports selected round and square substrates up to 8-inch class, configuration dependent.More detailsSupports selected 3”, 4”, 5”, 6”, and 8” / 200 mm wafer configurations depending on cassette, robot end-effector, quartz tray, susceptor, and automation configuration. Final wafer size support must be confirmed before order placement.
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| Vacuum Metal Chamber Assembly | AW820RV automatic vacuum RTP chamber with top and bottom quartz windows, 27 lamps, and 10-zone control.More detailsIncludes vacuum chamber structure, top and bottom quartz windows, top and bottom infrared lamp heating module, independent lamp-bank control with recipe-level lamp factor adjustment, vacuum pressure interface, and automatic wafer transfer interface.
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| Chassis Assembly | Automated AW820RV RTP chassis with embedded industrial computer, automation control, and vacuum control architecture.More detailsIncludes automated RTP main frame, embedded industrial control computer, robotic wafer handling control, cassette station, wafer centering / cooling station, touchscreen monitor, EMO, cooling fans, control electronics, power supplies, vacuum control interface, process gas lines with MFCs, cooling water and CDA gauges, valves, meters, switches, and safety monitoring features.
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| Standard Quartz Trays | Standard quartz trays available for selected round and square substrates.More detailsStandard quartz tray configurations are available for selected round wafers and square substrates depending on substrate size, shape, thickness, wafer bow, process temperature, automation configuration, robot end-effector configuration, susceptor selection, and application-specific handling requirements.
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| Thermocouple | One shielded K-type thermocouple assembly included.More detailsAW820RV vacuum RTP typically uses shielded thermocouple temperature measurement because of the vacuum chamber and quartz window configuration. Typical process temperature range is approximately 150°C to 1150°C depending on process conditions, substrate configuration, and application requirements.
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| Manuals & Software | USB drive with manuals, software, and schematics included.More detailsIncludes backup software, installation manual, operation manual, service manual, facility connection drawings, and AW820RV schematics.
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| Item | Optional Configuration / Capability |
| More Process Gas Lines | Optional additional process gas lines with support for up to 5 MFCs.More detailsAW820RV includes a dedicated N₂ purge line for vacuum chamber purge / backfill use. Additional process gas lines are available with optional shut-off valves, gas routing configurations, pressure control interface, and up to 5 MFCs depending on application-specific gas requirements.
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| Special Wafer Handling | Optional fragile-wafer, thin-wafer, susceptor-based, and hot-wafer handling configurations.More detailsCustom quartz tray and handling configurations are available for special wafer configurations, thin wafers, fragile substrates, bowed wafers, non-standard substrate formats, and application-specific process requirements after engineering review.
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| Application-Specific Susceptors | 3″, 4”, 6”, 8”, 16×2-inch, 5×3-inch, and 4×4-inch susceptors available.More detailsSusceptor selection depends on substrate material, IR transparency, wafer size, surface condition, process sensitivity, repeatability requirements, throughput, ramp-rate targets, and budget. SiC-coated graphite susceptors are recommended for best RTP repeatability and process stability.
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| Application-Specific Quartz Trays | Standard and/or custom quartz tray / handling configurations available for special substrates.More detailsCustom quartz tray and handling configurations are available for thin wafers, fragile substrates, bowed wafers, non-standard substrate formats, and application-specific process requirements after engineering review.
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| Vacuum Pump | Mechanical pump or dry pump configuration can be reviewed.More detailsAllwin21 recommends that customers select vacuum pumps based on existing fab or laboratory pump standards whenever possible. Allwin21 can provide vacuum pump requirement information after order placement and can review pump supply case by case if bundled purchasing is required.
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| Cooling Water Monitoring | Optional individual water-flow monitoring for each cooling-water circuit available. |
| Support & Service | Optional spare parts, installation, training, and process support.More detailsWorldwide engineering support, startup assistance, RTP training, process discussion, remote support, and field service are available depending on customer requirements.
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| GEM/SECS Interface | Optional GEM/SECS factory communication interface.More detailsSupports communication with factory automation systems and fab host / MES integration when required.
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| SMIF Wafer Loader Port | Optional SMIF wafer loader port for automated wafer handling integration.More detailsSupports integration with selected SMIF wafer loading systems for automated wafer transfer and factory automation applications. Final compatibility depends on customer fab standards and configuration requirements.
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| High Vacuum Capability | Optional turbo pump configuration for higher vacuum requirement.More detailsOptional turbo pump configuration may be reviewed for customers requiring higher vacuum capability. Actual vacuum performance depends on pump selection, chamber condition, plumbing, valve configuration, leak rate, and facility setup.
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| Facility Item | Typical Requirement |
|---|---|
| Electrical | Approx. 100 Amps 208–240 VAC, 60 Hz, 3-phase, 4-wire — North America typical 200 VAC, 50/60 Hz, 3-phase — Japan typical 380–415 VAC, 50 Hz, 3-phase, 5-wire — Europe / China typical
Please confirm facility power configuration before order placement. |
| Cooling Water | Closed-loop cooling water recommended Typical flow: 3–5 GPM Typical pressure: 30–40 PSI Recommended temperature: approximately 20°C Typical fitting: 1/2″ tubing Recommended chiller: SMC HRSF060-AN-20 or equivalent industrial closed-loop recirculating chiller |
| Quartz Window / Chamber Cooling Gas / CDA | N₂ or CDA Oil-free and water-free gas recommended Typical pressure: 15–30 PSI Typical flow: 10–15 SCFM Typical fitting: 3/8″ tubing |
| Process Gases / Exhaust | N₂ / O₂ / Ar / He / Forming Gas / NH₃ Typical process gas pressure: 10–30 PSI Typical fitting: 1/4″ VCR 4-inch exhaust duct recommended |
| Vacuum Pump / Exhaust | Vacuum pump and pump exhaust requirements depend on selected pump configuration, vacuum level, process gas, and customer facility standard. Customer pump standard should be reviewed before final configuration. |
| Item | Information |
|---|---|
| AW820RV Equipment Dimensions | Approx. 39″ W × 54″ D × 70″ H, configuration dependent |
| AW820RV Net Weight | Approximately 800 lbs, configuration dependent |
| Shipping Crate Dimensions | Approx. 48″ W × 62″ D × 81″ H, configuration dependent |
| Shipping Weight | Approximately 1455 lbs, configuration dependent |
- Product photos and descriptions are for general reference only.
- Final configuration, options, specifications, facility requirements, lead time, and delivery schedule shall be confirmed by Allwin21 official quotation and technical documents.
- Facility requirements depend on actual system configuration, process gases, pyrometer configuration, O₂ protection configuration, automation configuration, and customer process requirements.
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