AG ASSOCIATES MINIPULSE 310 RAPID THERMAL PROCESSOR
Allwin21 Corp. is the exclusive licensed manufacturer of AG Associates Heatpulse 610 Rapid Thermal Processing equipment. Allwin21 is manufacturing the new AccuThermo AW Series Atmospheric Rapid Thermal Processors and Vacuum Rapid Thermal Processors.Compared with traditional RTP systems, Allwin21″s AccuThermo AW RTPs have innovative software and more advanced temperature control technologies to achieve the best rapid thermal processing performance ( repeatability , uniformity and Stability etc.).
HEATPULSE 310 Applications
- Anneal Oxidation: Form a uniform layer of silicon dioxide to insulate a circuit element
- Silicidation: Decrease the resistivity of tungsten silicide or titanium silicide caps on polycrystalline device gates
- Nitridization : Form a silicon nitride layer for insulation, protection against oxidation, or anti-reflective coatings
- BSPG Reflow: Improve the surface characteristics such as uniformity for boron phosphorous spin on glass (BPSG). Also called densification
- Ion Activation : Cause implanted ions such as arsenic and boron to integrate into the silicon crystal lattice to improve surface conductivity
- Platinum Sintering: Form a thermionic bond between platinum and silicon to increase the current-carrying capability of a circuit
- Salicidation : Self-aligning Silicidation. Increase the conductivity of refractory metal silicides used to connect gate material to metallic vias. Similar to Silicidation
HEATPULSE 310 Features and Applications
Manually loaded and capable of processing silicon and III-V substrates up to 75mm in diameter, Minipulse 310 provides solutions to your process development and monitoring needs. Equipped with a graphical user interface to improve operator productivity, Minipulse 310 offers recipe management and system diagnostics.
HEATPULSE 310 Major System Features
- Semiconductor grade quartz process chamber
- 21 tungsten halogen lamps in an upper and lower array
- Extended Range Pyrometer: 400°C -1300oC (200°C w/TC)
These capabilities, combined with the heating chamber’s cold-wall design and superior heating uniformity, provide significant advantages over conventional furnace processing.
HEATPULSE 310 Key Features Include
- Closed-loop temperature control with pyrometer or thermocouple temperature sensing.
- Precise time-temperature profiles tailored to suit specific process requirements.
- Fast heating and cooling rates unobtainable in conventional technologies.
- Consistent wafer-to-wafer process cycle repeatability.
- Elimination of external contamination.
- Small footprint and energy efficiency.
HEATPULSE 310 Performance Specifications
- Recommended Steady State Temperature Range: 400-1250° C.
- Steady-State Temperature Stability: ± 2° C.
- Temperature Monitoring Mechanisms: Extended Range Pyrometer (ERP), used throughout the recommended temperature range, or a thermocouple, used for process temperatures below 400° C.
- Heating Rate: 1-200° C per second, user-controllable.
- Cooling Rate: Temperature dependent; max 150° C per second.
- Maximum Non-uniformity:
- ±5°C across a 6″ (150mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.) For a titanium silicidation process, no more than 4% increase in non-uniformity during the first anneal at 650°C to 700 °C.
- Post-anneal sheet resistivity measured on a 150mm wafer annealed at 1100° C for 10 seconds. R&D models optimized for slip control.
- Implant: As 1E16 50 KeV with implant uniformity ≤0.3%
- Lamp Life: Unconditionally guaranteed for three years.
- Steady State Time: 1-9999 sec. (1-600 sec. recommended)
- Wafer Sizes : 2″, 3″ and 4″.
- Process Gases: The HEATPULSE system delivers one non-corrosive process gas with manually controlled flow. Optional MFC, Up to 4.
- GUI software Standard , upgrade to P-CAT
- 16 bit A/D
