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Lam Rainbow 45XX Plasma Etcher

ByUpgrade Service

Model: Lam Rainbow 4520

OEM: Lam Research

Condition: Refurbished and Upgraded

Chuck Type: Clamp. Customized.

Wafer Size: Up to 8 inch capability. Customized.

Gases:1-6 or 1-8 lines with MFC. TBD. Customized.

Controller: Allwin21 PC with touch screen monitor.

Specifications: OEM

Valid Time: Subject to prior sale

The LRC Rainbow Etchers are fully automated, in-line, single-wafer plasma/RIE etching systems that processes 6-inch, or 8-inch wafers and features top or/and bottom powered electrode plate, programmable electrode spacing, and automatic noncontact wafer alignment and placement. Unique RF match networks are located at the upper and lower electrodes for programmable switching between plasma and RIE modes. Designed for continuous operation, the LRC Rainbow etchers are computer-controlled, allowing either manual or automatic control. The Lam Rainbow 45XX Series is mainly for Oxide Etch etc..

Lam Rainbow 45XX Series proven applications 

  • A contact oxide etch process with high selectivity to polysilicon (Ar/CF4/CHF3).
  • A Anisotropic via etch process with N2 addition (Ar/CF4/CHF3/N2).
  • Oxide spacer. A process to etch oxide spacers with high selectivity to polysilicon.
  • Photoresist/oxide etchback planarization etch. A process for photoresist/oxide etchback planarization (Ar/CF4/CHF3/02).
  • SOG/oxide etchback planarization etch. A process for SOG/oxide etchback planarization (Ar/He/CF4/CHF3/02).
  • Tapered contact etch. A two-step, photoresist erosion based process to etch sloped contacts with moderate selectivity to polysilicon (Ar/CF4/CHF3/02).
  • In situ soft etch. A mild silicon cleanup etch for reducing contact resistance after an anisotropic contact etch. This process also aids in the regrowth of oxide after a spacer etch (CF4/02).
  • Anisotropic dielectric etch. A contact etch process with high selectivity to polysilicon (Ar/CF4/CHF3).
  • Anisotropic via etch. A via etch process with N2 addition (Ar/CF4/CHF3/N2).
  • Oxide spacer etch. A low-flow process to etch oxide spacers with high selectivity to polysilicon (Ar/CF4/CHF3).
  • Silicon nitride etch. A front-end nitride etch with high selectivity to polysilicon and a profile > 80° (Ar/CF4/CHF3). 

Lam Rainbow 45XX Series with Allwin21 PC controller Features: 

  • Maintenance, Manual, Semi Automatic and Full Automatic operation modes
  • Automated calibration of all subsystems
  • Trouble shooting to sub-assembly levels
  • Programmed comprehensive calibration and diagnostic functions
  • Recipe creation for full automatic wafer processing
  • Automatic decline of improper recipes and process data
  • Multi level password protections
  • Storage of multiple recipes and system functions
  • Real-Time process data acquisition, display ,analysis
  • Real-Time graphics user display (GUI)
  • Process Data and Recipe storage on a hard drive
  • Easy TC vacuum gauge calibration with using software, not the hardware resistors adjusting.
  • Advanced EOP function with  SLOPE 

Lam Rainbow 45XX Series Configuration: 

  • Main chamber
  • Moving gap
  • Standard Process kit
  • Clamp chuck. ESC chuck is optional
  • 50 sccm UPC(unit 8130)/50torr MKS manometer or equivalent for Helium Backside cooling
  • 10 Torr Pressure monitor, MKS or equivalent
  • AC2 pressure controller or equivalent
  • Dual endpoint 405nm/520nm EOP is optional
  • Entrance loadlock
  • Exit loadlock
  • Mini match RF Match
  • AE-RFG1250 RF Generator or equivalent
  • Gases: 1-6 or 1-8 lines, Maximum 9 lines. Typical gases: Ar,1000sccm,CF4 100sccm,CHF3 100sccm,He 500sccm,SF6 100sccm,N2 100 sccm, He 50sccm,NF3 1000sccm,He 500sccm. Process dependent.
  • Stepper motor lead screw shuttle
  • 38A Hine Design Indexers
  • Universal Wafer aligner
  • Standard power module and cables RPM Power module is optional
  • TCU LAM2080 Chiller module or equivalent is optional
  • 208VAC 3Phase, 80A, 50/60Hz 

Lam Rainbow 45XX Series Specifications: 

  • Base pressure ≤ 5mT
  • Chamber Leak rate≤ 5 mT/min
  • ELL & XLL Leak rate≤ 10 mT/min
  • GAP set point：1cm ，Tolerance：≤ 0.02cm
  • Chiller Precision: ± 1℃
  • MFC/RF/DC precision: ≤5%* set points
  • Particle: Bare-Si(RF-Off), <50@0.3um
  • Etch Rate/Uniformity/Profile: Process dependent. We can provide the data for the above listed applications.

Lam Rainbow 45XX Facility Requirements:

  • Power: 208V.50/60Hz,3 phase 5 wires, WYE.30A(Max),23(Norm) for Etcher; 208V,50/60 Hz,3 phase, 5 wires, WYE, 30A(Max),23(Norm) for R.F. Cart; 208V,50/60 Hz,3 phase, 5 wires, WYE, 30A(Max),23(Norm) for TCU.
  • Physical Dimension and Weight: Etcher(44″W x 54″D x 66″, 1700 lbs); R.F. Chart (22″W x 32″D x 44″, 250 lbs); TCU (23″W x 37″D x 55″, 420 lbs);
  • Exhaust: Etcher, Cabinet(Draw CFM 300,H2O 0.5,House, 4 inch Duct Size,Amb; Etcher, Gas Panel(Draw CFM 75,H2O 0.5,Scrubbed, possible hazard,2 inch Duct Size,Amb.
  • Cooling Water: R,F,Cart(2±0.2 GPM, 85±5 PSI, 14~35°C,3/8″ ID fittings,<200 u); TCU(6±0.5 GPM, 11~26°C,1/2″ ID fittings,<200 u)
  • Nitrogen:40±10 PSI and 90±10 PSI, CDA can also be used for R.F.Cart.
  • Thermal Output: Etcher( 3.4K carried by water,3.4k carried by exhaust, 7k dispersed to environment); RF Cart( 7K carried by water,7k dispersed to environment); TCU( 4K carried by water,1k dispersed to environment).
  • Process Gases: 1/4″ VCR fittings,<0.05u filter.
  • The requirements is subject to change according to different configuration and terms.