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Tegal 6000 Used For: Polysilicon, Tungsten Silicide, Silicon Trench etch Reactor Type: HRe,up to 4 reactors Wafer Sizes (inches): 4-8 Loadlocked Reactor Yes

Tegal 1612 plasma etcher applications: Material Etched: Aluminum, Aluminum/Silicon/Copper, Titanium Nitride,Titanium Tungsten, Wafer Size: 3 to 6 inch

Tegal 1611 Plasma etcher:Material Used For: Polysilicon, Tungsten Silicide, Silicon Trench,Reactor Type: Triode Wafer Sizes (inches): 3-6 Loadlocked Reactor

Tegal 983 Applications: Material Etched: Oxide, PECVD Nitride, Titanium Nitride Main Etchant Gas(es): SF6, CHF3, Helium , Process Pressure (mTorr): 750-950

Tegal 981 Applications:Material Used For:Polysilicon, Nitride, Oxide (backside) Reactor Type:Diode, 38 mm Gap,Wafer Sizes (inches):5-8 inch,Gas(es):SF6

TEGAL 965 PLASMA ETCHING APPLICATIONS:Material Etched: Photoresist Main Etchant Gas(es): O2  Process Pressure (mTorr): 500-800 RF Power Level (watts): 500

ETCH MEASUREMENTS: Etch rate is the amount of material that is etched per minute. Etch non-uniformity is the measure of the variation in etch rate across the wafer.

ADVANTAGES OF PLASMA ETCHING: Anisotropic,Lower chemical costs,Reduced environmental impact ,cleanliness,Greater potential for production-line automation

Etching:Etching is the removal of material to achieve pattern transfer. The basic steps of etching are Transport,Adsorption,Reaction,Desorption