Archive | Article on Plasma Etch RIE

Tegal 6000 Used For: Polysilicon, Tungsten Silicide, Silicon Trench etch Reactor Type: HRe,up to 4 reactors Wafer Sizes (inches): 4-8 Loadlocked Reactor Yes

Tegal 1612 plasma etcher applications: Material Etched: Aluminum, Aluminum/Silicon/Copper, Titanium Nitride,Titanium Tungsten, Wafer Size: 3 to 6 inch

Tegal 1611 Plasma etcher:Material Used For: Polysilicon, Tungsten Silicide, Silicon Trench,Reactor Type: Triode Wafer Sizes (inches): 3-6 Loadlocked Reactor

Tegal 983 Applications: Material Etched: Oxide, PECVD Nitride, Titanium Nitride Main Etchant Gas(es): SF6, CHF3, Helium , Process Pressure (mTorr): 750-950

Tegal 981 Applications:Material Used For:Polysilicon, Nitride, Oxide (backside) Reactor Type:Diode, 38 mm Gap,Wafer Sizes (inches):5-8 inch,Gas(es):SF6

TEGAL 965 PLASMA ETCHING APPLICATIONS:Material Etched: Photoresist Main Etchant Gas(es): O2  Process Pressure (mTorr): 500-800 RF Power Level (watts): 500

ETCH MEASUREMENTS: Etch rate is the amount of material that is etched per minute. Etch non-uniformity is the measure of the variation in etch rate across the wafer.

ADVANTAGES OF PLASMA ETCHING: Anisotropic,Lower chemical costs,Reduced environmental impact ,cleanliness,Greater potential for production-line automation

Etching:Etching is the removal of material to achieve pattern transfer. The basic steps of etching are Transport,Adsorption,Reaction,Desorption

Fully refurbished and upgraded Tegal 903e Anisotropy Etch Facility Requirements. Allwin21 Corp. 12 months warranty.Electrical: 200-240 VAC

Fully Refurbished /upgraded Tegal 903e Dry Etcher Options:Robust Robotic Wafer Transfer Upgrade Kits, Through-The-Wall configuration,GEM/SEC II functions