Silicon Dioxide
Silicon dioxide (SiO2) has many uses in the fabrication of integrated circuits. It is used to fabricate the gate of a transistor, to isolate transistors from each other, to isolate various layers of electrical interconnection, and to isolate the finished integrated circuit from the environment. The specific function of the oxide determines whether it is produced from the thermal oxidation of single crystal silicon, or from the thermal oxidation of polysilicon; whether it is deposited at atmospheric pressure, or at a reduced pressure; and whether or not the oxide contains doping materials. Thermal oxide is produced by reacting oxygen or water vapor with silicon. Thermal oxides grow into the silicon surface; about 45% of the total oxide grown is below the original unoxidized silicon surface. At atmospheric pressure, a typical oxidation temperature is on the order of 1000 degrees Centigrade. Thermal oxides may also be grown under higher than atmospheric pressure, with a subsequent decrease in the processing temperature. Undoped thermal oxide is the most homogeneous film etched in the plasma etcher. Etch nonuniformities and residues are usually not a result of the properties of the undoped thermal oxide film. It is possible to deposit both doped and undoped silicon dioxide. Silane (SiH4) and oxygen react to form undoped silicon dioxide and hydrogen gas. A reactor for this process runs at atmospheric pressure, at a temperature of approximately 450 degrees Centigrade. Adding phosphine (PH3) to the reactor produces PSG (phosphosilicate glass). PSG films typically incorporate 4 to 8 % weight phosphorus. Adding diborane (B2H6) to the reactor along with the phosphine produces BPSG (borophosphosilicate glass).
The silicon dioxide films produced in an atmospheric reactor at low temperatures are not as dense as a thermally grown oxide. It is common to densify the PSG after deposition. The film is densified in a diffusion furnace at approximately 950 degrees Centigrade. If steam is added to the diffusion furnace carrier gas then the surface.
Allwin21 Corp. has been focusing on providing solutions and enhancements to Matrix 105 , Matrix 205, Gasonics Aura 1000 , Gasonics Aura 3010, Gasonics L3510, Branson/IPC 3000, Branson/IPC L3200 used plasma asher descum semiconductor process equipment and Tegal 901e, Tegal 903e, Tegal 901e TTW, Tegal 903e TTW, Lam AutoEtch 490 ,Lam AutoEtch 590, Lam AutoEtch 690, Lam AutoEtch 790, Lam Rainbow 44XX, Lam Rainbow 45XX, Lam Rainbow 46XX, Lam Rainbow 47XX, Matrix 303,Matrix 403 used plasma Etch RIE semiconductor process equipment. These OEM semiconductor equipment have been used in productions and R&D since 1990′s. They have been proven to be a true “work horse”. Allwin21 Corp. can customize these OEM systems with Allwin21′s comparable integrated process control system with PC, solid robotic wafer transfer system and new critical components to achieve the goal of giving our customers a production edge with right cost.
Allwin21 Corp. was formed in 2000 with a focus on professionally providing Rapid Thermal Process, Plasma Asher Stripper Descum, Plasma Etch/RIE, Sputter Deposition high-tech semiconductor equipment, services and technical support in Semiconductor industry, MEMS, Biomedical, Nanotechnology, Solar, LEDs etc. We endeavor to be a leader in our semiconductor equipment product lines. To achieve this, we have been providing unique innovative and cost-effective technical solution, high quality semiconductor equipment and on time spare parts delivery worldwide. We have maintained a global presence that has grown and expanded into the major high-tech manufacturing areas of the world. We pride ourselves on developing and continuing lasting customer and client relationships.
We understand that a timely responsive support and service are critical elements in semiconductor industries. Allwin21 experienced engineer team is the best guaranty for our high quality service and support. We provide on-site installation, training, maintenance, semiconductor equipment optimization, retrofits, customized upgrades.
We continue to be a fast growing company. Our unique ability to provide high performance semiconductor equipment benefits our customers. Our awareness, flexibility, unique quality and innovation are the driving force of our success.
- Allwin21 is the exclusive licensed manufacturer of AG Associates Heatpulse 610 Rapid Thermal Processor semiconductor equipment.
- Advanced AW Series Software for the Rapid Thermal Process, Plasma Asher Stripper Descum,Plasma Etch/RIE, Sputter Deposition semiconductor equipment, which enable new processes, increase yield, improve uptime, reduce maintenance costs, and extend capital equipment.
- Integrated robotic wafer transfer for many single wafer process semiconductor equipment which increases equipment stability sharply.
- The AW software incorporates a Superior Temperature Control Technology (Advanced PID) that surpasses all original manufactures specs and make the semiconductor equipment have much better repeability. The AW software is capable of controlling the temperature of the wafer to ± 1°C. It is also able to control the temperature from wafer to wafer to ± 0.5°C.
- All our semiconductor equipment go through a series of rigorous tests which are documented, standardized, and certified by performance and reliability standards. By strictly following these procedures, the customer receives guaranteed rapid start-up, lifecycle reliability, and proven process performance.
