PRODUCTION OF SILICON WAFERS:
Silicon is the second most abundant element on Earth (oxygen is first). Beach sand, granite, lava, and volcanic glasses are all rich in silicon. The silicon that is used to produce wafers for the semiconductor industry is called Electronic Grace Silicon (EGS). It is refined in a multi-step process from quartzite, which is a naturally occurring, relatively pure form of silicon dioxide (SiO2). The EGS in turn is the starting material that is used to produce ingots of single crystal silicon. Individual silicon wafers are sawn from the silicon ingots, polished, packaged, and shipped to the manufacturers of integrated circuits to become the starting material in the wafer fabrication process. The first step in the production of EGS is the reduction of SiO2 to Si. SiO2 in the presence of carbon and heat will react to form CO (carbon monoxide gas) and liquid silicon. The reaction occurs in a submerged electrode arc furnace at very high temperatures (the melting point of silicon is approximately 1400 degrees Centigrade). The silicon that is discharged from the furnace, cooled and solidified, is called Metallurgical Grade Silicon (MGS). This silicon is pure enough for use as an alloy, but not as material for the production of integrated circuits. The second phase of EGS production involves further purification of the MGS. The solid silicon is ground to a fine powder. The powdered silicon, in the presence of a catalyst, is reacted with hydrogen chloride gas (HCI) to form trichlorosilane (SiHCI3). Trichlorosilane is a liquid at room temperature. Impurities in the MGS also react with the hydrogen chloride and are converted to their chlorides e.g., AICI3, BCI3. The trichlorosilane-impurity mixture is separated by fractional distillation; the result is extremely pure trichlorosilane. Trichlorosilane and hydrogen gas react to form solid silicon and hydrogen chloride gas. A silicon rod in the reactor acts as the nucleation site for the depositing silicon. The purity of the silicon that has been deposited is now such that it is classified as Electronic Grade Silicon. It is still polycrystaline, and must be further processed before it can be cut into individual wafers.
The process by which EGS is converted to an ingot of single crystal silicon is called Czochraiski (CA) crystal growth, named after its founder. CA growth is a complex, closely monitored process in which a charge or batch of solid EGS is melted, and then placed in contact with a seed crystal of precise crystallographic orientation. As the seed crystal is withdrawn from the melt, a rod of solid silicon with the same crystal lattice orientation as the seed will be formed. The diameter of this rod varies with the rate at which the seed crystal is withdrawn; larger diameters are formed with slower pull speeds. Rods of up to three meters in length are formed in this way. Impurities, or dopants, can be added to the melt to produce N type material (Phosphorus doped) or P type material (Boron doped). The ingot of single crystal silicon is checked for defects and crystal orientation. It is then ground to the correct diameter, and ground again with the major and minor flats. The flats indicate the crystal plane orientation and dopant type (P or N). Individual wafers are sawn from the ingot, lapped for thickness and flatness, etched to remove damaged surfaces, polished, cleaned, inspected, packaged, and shipped to integrated circuit manufacturers. The wafers are now ready to serve as the starting material for the fabrication of silicon devices.
Allwin21 Corp. has been focusing on providing solutions and enhancements to Matrix 105 , Matrix 205, Gasonics Aura 1000 , Gasonics Aura 3010, Gasonics L3510, Branson/IPC 3000, Branson/IPC L3200 used plasma asher descum semiconductor process equipment and Tegal 901e, Tegal 903e, Tegal 901e TTW, Tegal 903e TTW, Lam AutoEtch 490 ,Lam AutoEtch 590, Lam AutoEtch 690, Lam AutoEtch 790, Lam Rainbow 44XX, Lam Rainbow 45XX, Lam Rainbow 46XX, Lam Rainbow 47XX, Matrix 303,Matrix 403 used plasma Etch RIE semiconductor process equipment. These OEM semiconductor equipment have been used in productions and R&D since 1990′s. They have been proven to be a true “work horse”. Allwin21 Corp. can customize these OEM systems with Allwin21′s comparable integrated process control system with PC, solid robotic wafer transfer system and new critical components to achieve the goal of giving our customers a production edge with right cost.
Allwin21 Corp. was formed in 2000 with a focus on professionally providing Rapid Thermal Process, Plasma Asher Stripper Descum, Plasma Etch/RIE, Sputter Deposition high-tech semiconductor equipment, services and technical support in Semiconductor industry, MEMS, Biomedical, Nanotechnology, Solar, LEDs etc. We endeavor to be a leader in our semiconductor equipment product lines. To achieve this, we have been providing unique innovative and cost-effective technical solution, high quality semiconductor equipment and on time spare parts delivery worldwide. We have maintained a global presence that has grown and expanded into the major high-tech manufacturing areas of the world. We pride ourselves on developing and continuing lasting customer and client relationships.
We understand that a timely responsive support and service are critical elements in semiconductor industries. Allwin21 experienced engineer team is the best guaranty for our high quality service and support. We provide on-site installation, training, maintenance, semiconductor equipment optimization, retrofits, customized upgrades.
We continue to be a fast growing company. Our unique ability to provide high performance semiconductor equipment benefits our customers. Our awareness, flexibility, unique quality and innovation are the driving force of our success.
- Allwin21 is the exclusive licensed manufacturer of AG Associates Heatpulse 610 Rapid Thermal Processor semiconductor equipment.
- Advanced AW Series Software for the Rapid Thermal Process, Plasma Asher Stripper Descum,Plasma Etch/RIE, Sputter Deposition semiconductor equipment, which enable new processes, increase yield, improve uptime, reduce maintenance costs, and extend capital equipment.
- Integrated robotic wafer transfer for many single wafer process semiconductor equipment which increases equipment stability sharply.
- The AW software incorporates a Superior Temperature Control Technology (Advanced PID) that surpasses all original manufactures specs and make the semiconductor equipment have much better repeability. The AW software is capable of controlling the temperature of the wafer to ± 1°C. It is also able to control the temperature from wafer to wafer to ± 0.5°C.
- All our semiconductor equipment go through a series of rigorous tests which are documented, standardized, and certified by performance and reliability standards. By strictly following these procedures, the customer receives guaranteed rapid start-up, lifecycle reliability, and proven process performance.
