Configuration and Specification of Perkin-Elmer 4450 uhv sputtering system:

| Items |
Perkin-Elmer 4450 uhv sputtering system |
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| Basic System |
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| Cathode Shape | Delta | ||
| Cathode Size | Delta | ||
| Cathode Port Amount | 1 to 3 | ||
| Cathode/Sputter Type | DC Magnetron (RF Magnetron, RF Diode, Pulse DC are optional) | ||
| DC Power Supply | 1-10 KW | ||
| RF Power Supply | 1-3 KW | ||
| Process Gases | Argon (200 SCCM) Standard, Up to 3 gas lines, MFC customized. | ||
| Substrate Size | Small to 6 inch | ||
| Wafer Load | Manually load,capable of fully automatic operation | ||
| Throughput per Batch | 3” wafer, 30 pieces ; 4”wafer, 13 pieces; 5” wafer, 9 pieces; 6” wafer,7 pieces; 8’ wafer, 5 pieces | ||
| Sputter Rate | 20 to 500 Angstroms/kw-min depending on different model, cathode, process, sputter material etc | ||
| Uniformity Capacity | ±5%~7% | ||
| Options |
* Turbo pump for load lock * Dry pump or mechanical pump * Cathode Blank Cover |
* Load lock heating function (200 oC)
* Process Chamber heating function (360 oC) * Reactive Sputter |
* RF Etch
* RF Bias * Co-Sputter |

