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Configuration and Specification of Perkin-Elmer 4450 uhv sputtering system

ByArticle on Sputter Deposition

Configuration and Specification of Perkin-Elmer 4450 uhv sputtering system:

Items	Perkin-Elmer 4450 uhv sputtering system
Basic System	New Controller :Allwin21 Corp.’s AW-4450 System Control New Power Distribution Box: New, AC380V /208V/ 3Phase Fully Refurbished Perkin-Elmer Original Frame Fully Refurbished other parts, replace with new if necessary Fully Refurbished Process Chamber Fully Refurbished Load lock Fully Refurbished Vacuum Systems for load lock and process chamber
Cathode Shape	Delta
Cathode Size	Delta
Cathode Port Amount	1 to 3
Cathode/Sputter Type	DC Magnetron (RF Magnetron, RF Diode, Pulse DC are optional)
DC Power Supply	1-10 KW
RF Power Supply	1-3 KW
Process Gases	Argon (200 SCCM) Standard, Up to 3 gas lines, MFC customized.
Substrate Size	Small to 6 inch
Wafer Load	Manually load,capable of fully automatic operation
Throughput per Batch	3” wafer, 30 pieces ; 4”wafer, 13 pieces; 5” wafer, 9 pieces; 6” wafer,7 pieces; 8’ wafer, 5 pieces
Sputter Rate	20 to 500 Angstroms/kw-min depending on different model, cathode, process, sputter material etc
Uniformity Capacity	±5%~7%
Options	* Turbo pump for load lock * Dry pump or mechanical pump * Cathode Blank Cover	* Load lock heating function (200^oC) * Process Chamber heating function (360^oC) * Reactive Sputter	* RF Etch * RF Bias * Co-Sputter

Configuration and Specification of Perkin-Elmer 4410 plasma sputtering systems

Configuration and Specification of Perkin-Elmer 4480 sputtering process system

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