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Configuration and Specification of Perkin-Elmer 4410 plasma sputtering systems

ByArticle on Sputter Deposition

Configuration and Specification of Perkin-Elmer 4410 plasma sputtering systems:

AccuSputter AW 4450 Sputter Deposition System

Items

Perkin-Elmer 4410

Basic System

  • New Controller :Allwin21 Corp.’s AW-4450 System Control

  • New Power Distribution Box: New, AC380V /208V/ 3Phase

  • Fully Refurbished Perkin-Elmer Original Frame

  • Fully Refurbished other parts, replace with new if necessary

  • Fully Refurbished Process Chamber

  • Fully Refurbished Load lock

  • Fully Refurbished Vacuum Systems for load lock and process chamber

Cathode Shape

Delta

Cathode Size

Delta

Cathode Port Amount

1 to 3

Cathode/Sputter Type

DC Magnetron (RF Magnetron, RF Diode, Pulse DC are optional)

DC Power Supply

1-10 KW

RF Power Supply

1-3 KW

Process Gases

Argon (200 SCCM) Standard, Up to 3 gas lines, MFC customized.

Substrate Size

Small to 6 inch

Wafer Load

Manually load,capable of fully automatic operation

Throughput per Batch

3” wafer, 30 pieces ; 4”wafer, 13 pieces; 5” wafer, 9 pieces; 6” wafer,7 pieces; 8’ wafer, 5 pieces

Sputter Rate

20 to 500 Angstroms/kw-min depending on different model, cathode, process, sputter material etc

Uniformity Capacity

±5%~7%

Options

*   Turbo pump for load lock

*   Dry pump or mechanical pump

*   Cathode Blank Cover

*   Load lock heating function (200 oC)

*   Process Chamber heating function (360 oC)

*   Reactive Sputter

*   RF Etch

*   RF Bias

*   Co-Sputter

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