The robust integrated robotic wafer transfer for Tegal 901e Tegal 903e
Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral (atoms and radicals). During the process, the plasma will generate volatile etch products at room temperature from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma. Eventually the atoms of the shot element embed themselves at or just below the surface of the target, thus modifying the physical properties of the target. Plasma systems ionize a variety of source gases in a vacuum system by using RF excitations. The frequency of operation of the RF power source is frequently 13.56 MHz, one of the frequencies reserved worldwide for industrial, scientific, and medical uses (ISM). Nevertheless, it can be used at lower frequencies (kilohertz) or higher (microwave).The mode of operation of the plasma system will change if the operating pressure changes. Also, it is different for different structures of the reaction chamber. In the simple case, the electrode structure is symmetrical, and the sample is placed upon the grounded electrode. Free radicals such as fluorine or chlorine are created in the plasma and react at the sample surface. Without the assistance of the plasma, much higher temperature would be required. The low processing temperature is possible because the plasma generates atoms, molecular radicals, and positive ions that are more chemically reactive than the normal molecular gases from which the species are created. The key to developing successful complex etching processes is to find the appropriate gas etch chemistry that will form volatile products with the material to be etched. For some difficult materials (such as magnetic materials), the volatility can only be obtained when the wafer temperature is increased.
Allwin21 Corp. has been focusing on providing solutions and enhancements to Tegal 901e, Tegal 903e, Tegal 901e TTW, Tegal 903e TTW, Lam AutoEtch 490 ,Lam AutoEtch 590, Lam AutoEtch 690, Lam AutoEtch 790, Lam Rainbow 44XX, Lam Rainbow 45XX, Lam Rainbow 46XX, Lam Rainbow 47XX, Matrix 303,Matrix 403 used plasma Etch RIE semiconductor process equipment. These OEM Etch RIE semiconductor equipment have been used in productions and R&D since 1990′s. They have been proven to be a true “work horse”. Allwin21 Corp. can customize these OEM systems with Allwin21′s comparable integrated process control system with PC, solid robotic wafer transfer system and new critical components to achieve the goal of giving our customers a production edge with right cost.
Tegal 901e Plasma Etch RIE
Tegal 903e Plasma Etch RIEManufacturer: Tegal | Condition: Fully Refurbished&Upgraded By Allwin21 | Wafer Size: 3″/4″/5″/6″Capability | Wafer loading: Automatic, Original Belt-Shuttle-Wafer-Transfer OR Allwin21 Solid-Robotic-Wafer-Transfer | Plasma Power: RF,13.56MHz | Type: Parallel/Single Wafer Process/Plasma Etch/RIE/Stand Alone | Etch Materials: Silicon Oxide | Gas Lines: 1~4 lines capability with customized MFCs range
Tegal 901e TTW Plasma Etch RIEManufacturer:Tegal | Condition:Fully Refurbished&Upgraded By Allwin21 | Wafer Size:3″/4″/5″/6″Capability | Wafer loading: Automatic, Allwin21 Solid-Robotic-Wafer-Transfer | Plasma Power: RF,13.56MHz | Type:Parallel/Single Wafer Process/Plasma Etch/RIE/Through-The-Wall(TTW) | Etch Materials: Polysilicon, Refractory metal silicides and Nitride | Gas Lines:1~4 lines capability with customized MFCs range
Tegal 903e TTW Plasma Etch RIEManufacturer: Tegal | Condition: Fully Refurbished&Upgraded By Allwin21 | Wafer Size: 3″/4″/5″/6″Capability | Wafer loading: Automatic, Allwin21 Solid-Robotic-Wafer-Transfer | Plasma Power: RF,13.56MHz | Type: Parallel/Single Wafer Process/Plasma Etch/RIE/Through-The-Wall(TTW) | Etch Materials: Silicon Oxide | Gas Lines: 1~4 lines capability with customized MFCs range
Lam AutoEtch 490 Plasma EtchManufacturer:Lam Research | Condition:Fully Refurbished and Upgraded By Allwin21 | Wafer Size:4″/5″/6″Capability | Wafer loading:Automatic, Original Robotic-Wafer-Transfer | Plasma Power:RF,13.56MHz | Type:Parallel/Single Wafer Process/Plasma Etch/Stand Alone | Etch Materials: Polysilicon, Refractory metal silicides and Nitride | Gas Lines: 1~5 lines capability with customized MFCs range
Lam AutoEtch 590 Plasma EtchManufacturer:Lam Research | Condition:Fully Refurbished and Upgraded By Allwin21 | Wafer Size:4″/5″/6″Capability | Wafer loading:Automatic, Original Robotic-Wafer-Transfer | Plasma Power:RF,13.56MHz | Type:Parallel/Single Wafer Process/Plasma Etch/Stand Alone | Etch Materials: Silicon Dioxide | Gas Lines: 1~5 lines capability with customized MFCs range
Lam AutoEtch 690 Plasma EtchManufacturer:Lam Research | Condition:Fully Refurbished and Upgraded By Allwin21 | Wafer Size:4″/5″/6″Capability | Wafer loading:Automatic, Original Robotic-Wafer-Transfer | Plasma Power:RF,13.56MHz | Type:Parallel/Single-Wafer-Process/Plasma Etch/Stand-Alone | Etch Materials:Metal lead(such as Aluminum,Aluminum-Alloy with silicon or both) | Gas Lines: 1~5 lines capability with customized MFCs range
Lam AutoEtch 790 Plasma EtchManufacturer:Lam Research | Condition:Fully Refurbished and Upgraded By Allwin21 | Wafer Size:4″/5″/6″Capability | Wafer loading: Automatic, Original Robotic-Wafer-Transfer | Plasma Power:RF,13.56MHz | Type:Parallel/Single Wafer Process/Plasma Etch/Stand Alone | Etch Materials: Barrier-metal/alloys(such as Titanium/Tungsten) etching | Gas Lines: 1~5 lines capability with customized MFCs range
Lam Rainbow 4420 Plasma Etch RIEManufacturer:Lam Research | Condition:Fully Refurbished and Upgraded by Allwin21 with Allwin21 Own New Controller and Software | Wafer Size:4″/5″/6″/8″Capability | Wafer loading:Automatic, Original Robotic-Wafer-Transfer | Plasma Power:RF,13.56MHz | Type:Parallel/Single Wafer Process/Plasma Etch/RIE/Stand Alone | Etch Materials: Polysilicon, Refractory metal silicides and Nitride | Gas Lines:1~8 lines capability with customized MFCs range
Lam Rainbow 4520 Plasma Etch RIEManufacturer: Lam Research | Condition: Fully Refurbished and Upgraded by Allwin21 with Allwin21 Own New Controller and Software | Wafer Size: 4″/5″/6″/8″Capability | Wafer loading: Automatic, Original Robotic-Wafer-Transfer | Plasma Power: RF,400kHz | Type: Parallel/Single Wafer Process/Plasma Etch/RIE/Stand Alone | Etch Materials: Silicon Dioxide | Gas Lines: 1~8 lines capability with customized MFCs range
Lam Rainbow 4620 Plasma EtchManufacturer:Lam Research | Condition:Fully Refurbished and Upgraded by Allwin21 with Allwin21 Own New Controller and Software | Wafer Size:4″/5″/6″/8″Capability | Wafer loading:Automatic,Original Robotic-Wafer-Transfer | Plasma Power:RF,13.56MHz | Type:Parallel/Single Wafer Process/Plasma Etch/Stand Alone | Etch Materials:Metal lead(such as Aluminum,Aluminum Alloy with silicon or both) | Gas Lines:1~8lines capability with customized MFCs range
Lam Rainbow 4720 Plasma EtchManufacturer: Lam Research | Condition: Fully Refurbished and Upgraded by Allwin21 with Allwin21 Own New Controller and Software| Wafer Size:4″/5″/6″/8″Capability | Wafer loading:Automatic, Original Robotic-Wafer-Transfer | Plasma Power:RF,13.56MHz | Type:Parallel/Single Wafer Process/Plasma Etch/Stand Alone | Etch Materials:Barrier-metal/alloys(such as Titanium/Tungsten) etching | Gas Lines:1~8lines capability with customized MFCs range
Matrix 303 Plasma EtchManufacturer: Matrix | Condition: Fully Refurbished and Upgraded by Allwin21 | Wafer Size: 3″4″/5″/6″Capability | Wafer loading: Automatic,Original Brooks Orbitran® System-Frog Robot | Plasma Power: RF,13.56MHz | Type:Parallel/Single Wafer Process/Plasma Etch/Stand Alone | Etch Materials: Nitride,Silicon Dioxide | Gas Lines: 1~3lines capability with customized MFCs range
Matrix 403 Plasma EtchManufacturer: Matrix | Condition: Fully Refurbished and Upgraded by Allwin21 | Wafer Size: 3″/4″/5″/6″Capability | Wafer loading:Automatic, Original Brooks Orbitran® System-Frog Robot | Plasma Power:RF,13.56MHz | Type:Parallel/Single Wafer Process/Plasma Etch/Through The Wall(TTW) | Etch Materials: Nitride,Silicon Dioxide | Gas Lines: 1 ~ 3lines capability with customized MFCs range
