Manufacturer: Allwin21
Condition: New
Wafer Size: 2″ – 6″ Capability
Wafer Loading: 3-axis Robot
Plasma Power: Microwave
Type: Parallel/Single Wafer Process; Stand-Alone
Gas Lines: 4 Lines
Free Fast Quote: Link
Downloads: AW-2001R (PDF)
Allwin21 AW-2001R Features:
- Designed with III-V Production in Mind.
- Controller with Touchscreen GUI and PentiumⓇ Grade PC.
- The 3-axis wafer transport robot installed:
- Superior than Gasonics Aura AE-2001 design that’s synonymous for wafer breakage and constant alarms/errors.
- INCREASED THROUGHPUT
- Receive cassette station can be substituted with a Cooling/Alignment station to prevent wafer breakage.
- NO OBSOLETE PARTS.
- Water-Cooled 1000W Magnetron/Waveguide with an AGL Microwave Power Generator for BETTER PROCESS REPEATABILITY.
- BETTER UNIFORMITY by using “extended” Alumina Plasma Tube.
- Option to run different wafer sizes without any hardware changes.
Specifications:
- Wafer Size: 2, 3, 4, 5, 6 inch Capability.
- Chuck Temperature: 60-110ºC (±2 ºC)
- Gases: NF3 CF4 HE O2
- Uniformity:
- 100mm : ± 3% (5% 3 sigma) *
- 150mm : ± 5% (8% 3 sigma) *
- *max.- min. /2 x average
- Reproducibility (w-t-w): 10% 3 sigma
- Particulate: 0.05p/cm2 > 0.3µm
- NO DAMAGE: ≤0.1 Volt CV-shift
Applications:
- Contact Slope Etch
- Via Etch
- BPSG Etch
- LTO Etch
- TEOS Etch
- Thermal Oxide Etch
- LPCVD Nitride Etch
- PECVD Nitride Etch
- Trench Rounding
- Descum
- RIE Damage Removal
- Sodium Removal
- Planarization
- Backside Etch (Poly, Nitride, or Oxide)
- Nitride Pattern Removal (PBL, LOCOS w/ Pad Ox = >400Å)
- Low Temp Photoresist Ashing over Oxides, Poly, Al, W, Ti, or Moly
Facilities:
- Vacuum Chamber Pump = 165 cfm (to Corrosive Exhaust)
- Cabinet Exhaust (house) = >250 cfm
- Plumbed Gases:
- CF4
- O2
- He
- NF3
- Electrical Requirements: 208VAC, 3-Phase, 60Hz, 30Amps
- Water for cooling Waveguide and Magnetron.
Contact Us for More Information
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