AW-2001R Etcher

Manufacturer: Allwin21
Condition: New
Wafer Size: 2″ – 6″ Capability
Wafer Loading: 3-axis Robot
Plasma Power: Microwave
Type: Parallel/Single Wafer Process; Stand-Alone
Gas Lines: 4 Lines
Downloads:
AW-2001R (PDF)


Allwin21 AW-2001R Features:

  • Designed with III-V Production in Mind.
  • Controller with Touchscreen GUI and PentiumⓇ Grade PC.
  • The 3-axis wafer transport robot installed:
    • Superior than Gasonics Aura AE-2001 design that’s synonymous for wafer breakage and constant alarms/errors.
    • INCREASED THROUGHPUT
    • Receive cassette station can be substituted with a Cooling/Alignment station to prevent wafer breakage.
  • NO OBSOLETE PARTS.
  • Water-Cooled 1000W Magnetron/Waveguide with an AGL Microwave Power Generator for BETTER PROCESS REPEATABILITY.
  • BETTER UNIFORMITY by using “extended” Alumina Plasma Tube.
  • Option to run different wafer sizes without any hardware changes.

Specifications:

  • Wafer Size: 2, 3, 4, 5, 6 inch Capability.
  • Chuck Temperature: 60-110ºC (±2 ºC)
  • Gases: NF3 CF4 HE O2
  • Uniformity:
    • 100mm : ± 3% (5% 3 sigma) *
    • 150mm : ± 5% (8% 3 sigma) *
    • *max.- min. /2 x average
  • Reproducibility (w-t-w): 10% 3 sigma
  • Particulate: 0.05p/cm2 > 0.3µm
  • NO DAMAGE: ≤0.1 Volt CV-shift

Applications:

  • Contact Slope Etch
  • Via Etch
  • BPSG Etch
  • LTO Etch
  • TEOS Etch
  • Thermal Oxide Etch
  • LPCVD Nitride Etch
  • PECVD Nitride Etch
  • Trench Rounding
  • Descum
  • RIE Damage Removal
  • Sodium Removal
  • Planarization
  • Backside Etch (Poly, Nitride, or Oxide)
  • Nitride Pattern Removal (PBL, LOCOS w/ Pad Ox = >400Å)
  • Low Temp Photoresist Ashing over Oxides, Poly, Al, W, Ti, or Moly

Facilities:

  • Vacuum Chamber Pump = 165 cfm (to Corrosive Exhaust)
  • Cabinet Exhaust (house) = >250 cfm
  • Plumbed Gases:
    • CF4
    • O2
    • He
    • NF3
  • Electrical Requirements: 208VAC, 3-Phase, 60Hz, 30Amps
  • Water for cooling Waveguide and Magnetron.

 

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