AW-2001R Etcher

Manufacturer: Allwin21
Condition: New
Wafer Size: 2″ – 6″ Capability
Wafer Loading: 3-axis Robot
Plasma Power: Microwave
Type: Parallel/Single Wafer Process; Stand-Alone
Gas Lines: 4 Lines
Downloads:
AW-2001R (PDF)


Allwin21 AW-2001R Features:

  • Designed with III-V Production in Mind.
  • Controller with Touchscreen GUI and PentiumⓇ Grade PC.
  • The 3-axis wafer transport robot installed:
    • Superior than Gasonics Aura AE-2001 design that’s synonymous for wafer breakage and constant alarms/errors.
    • INCREASED THROUGHPUT
    • Receive cassette station can be substituted with a Cooling/Alignment station to prevent wafer breakage.
  • NO OBSOLETE PARTS.
  • Water-Cooled 1000W Magnetron/Waveguide with an AGL Microwave Power Generator for BETTER PROCESS REPEATABILITY.
  • BETTER UNIFORMITY by using “extended” Alumina Plasma Tube.
  • Option to run different wafer sizes without any hardware changes.

Specifications:

  • Wafer Size: 2, 3, 4, 5, 6 inch Capability.
  • Chuck Temperature: 60-110ºC (±2 ºC)
  • Gases: NF3 CF4 HE O2
  • Uniformity:
    • 100mm : ± 3% (5% 3 sigma) *
    • 150mm : ± 5% (8% 3 sigma) *
    • *max.- min. /2 x average
  • Reproducibility (w-t-w): 10% 3 sigma
  • Particulate: 0.05p/cm2 > 0.3µm
  • NO DAMAGE: ≤0.1 Volt CV-shift

Applications:

  • Contact Slope Etch
  • Via Etch
  • BPSG Etch
  • LTO Etch
  • TEOS Etch
  • Thermal Oxide Etch
  • LPCVD Nitride Etch
  • PECVD Nitride Etch
  • Trench Rounding
  • Descum
  • RIE Damage Removal
  • Sodium Removal
  • Planarization
  • Backside Etch (Poly, Nitride, or Oxide)
  • Nitride Pattern Removal (PBL, LOCOS w/ Pad Ox = >400Å)
  • Low Temp Photoresist Ashing over Oxides, Poly, Al, W, Ti, or Moly

Facilities:

  • Vacuum Chamber Pump = 165 cfm (to Corrosive Exhaust)
  • Cabinet Exhaust (house) = >250 cfm
  • Plumbed Gases:
    • CF4
    • O2
    • He
    • NF3
  • Electrical Requirements: 208VAC, 3-Phase, 60Hz, 30Amps
  • Water for cooling Waveguide and Magnetron.

 

  Contact Us for More Information

RFQ-Etcher RIE

    Please help fill in the following Customer Survey Form for suitable Plasma Etch RIE model and configuration for your applications.Appreciate your time. Thank you very much.

    1. Your Name(Required):

    2. Your Email(Required):

    3. Your Company Name(Required):

    4. Company Address:

    5. Substrate Sizes(Required):
    small sample1 inch2 inch3 inch4 inch5 inch6 inch6.125 inch6.25 inch8 inch12 inchOthers
    6. Substrate Material(Required):
    SiSiCGaAsGaNGaInPInPOthersNot sure
    7. Etch Material (Required):
    NitrideSilicon DioxidePolysiliconRefractory metal silicidesBarrier-metal/alloysMetal lead(Al,Al-Alloy with silicon)OthersNot sure
    8. What are the highest and lowest process temperature(Required,°C):

    9. What is the Etcher rate specification:

    10. What are the Etcher Uniformity/Repeatability specifications:

    11. Amount of Gas lines(Required):

    12. What are the maximum and minimum RF power watts?

    13. Did you use any Plasma Etcher RIE Equipment which met your requirements? If yes, pls specify brand and model(Required).

    14. Special Requirements:

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