Configuration of AccuSputter AW 4450

Configuration of  AccuSputter AW 4450

 
Model

AccuSputter AW 4450

Delta Cathode Configuration Circular Cathode Configuration
Basic System
Cathode Size Delta 8″ 6″ 5″ 4″ 3″ 2″ 14″
Cathode Port Amount 1 2 3 1 to 4 1 to 8 1
Sputter Type DC Magnetron RF Magnetron RF Diode Pulse DC
DC Power Supplier 1-10KW 1-5KW
RF Power Supplier 1-3KW 1-2KW
Substrate Size ~ 8 inch ~6inch ~4inch ~3inch ~3inch ~2inch ~1inch ~12inch
Wafer Load Manually load
Throughput per Batch 3/4/5/6/8″ Wafer Size: 30/14/10/8/5 pieces 3/4/5/6″ Wafer Size:30/14/10/8 pieces 12″/1
Sputter Rate 20 to 500 Angstroms/kw-min depending on different model, cathode, process, sputter material etc
Uniformity Capacity ±5%~7% ±7%~10%
Options

*  Turbo pump for load lock

*  Load lock heating function (200 oC)

*  RF Etch

*  Dry pump or mechanical pump

*  Process Chamber heating function (360 oC)

*  RF Bias

 

AccuSputter AW 4450 Sputter Deposition System