Configuration of AccuSputter AW 4450
Model |
AccuSputter AW 4450 |
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Delta Cathode Configuration | Circular Cathode Configuration | |||||||||||||||||
Basic System |
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Cathode Size | Delta | 8″ | 6″ | 5″ | 4″ | 3″ | 2″ | 14″ | ||||||||||
Cathode Port Amount | 1 | 2 | 3 | 1 to 4 | 1 to 8 | 1 | ||||||||||||
Sputter Type | DC Magnetron | RF Magnetron | RF Diode | Pulse DC | ||||||||||||||
DC Power Supplier | 1-10KW | 1-5KW | ||||||||||||||||
RF Power Supplier | 1-3KW | 1-2KW | ||||||||||||||||
Substrate Size | ~ 8 inch | ~6inch | ~4inch | ~3inch | ~3inch | ~2inch | ~1inch | ~12inch | ||||||||||
Wafer Load | Manually load | |||||||||||||||||
Throughput per Batch | 3/4/5/6/8″ Wafer Size: 30/14/10/8/5 pieces | 3/4/5/6″ Wafer Size:30/14/10/8 pieces | 12″/1 | |||||||||||||||
Sputter Rate | 20 to 500 Angstroms/kw-min depending on different model, cathode, process, sputter material etc | |||||||||||||||||
Uniformity Capacity | ±5%~7% | ±7%~10% | ||||||||||||||||
Options |
* Turbo pump for load lock |
* Load lock heating function (200 oC) |
* RF Etch |
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* Dry pump or mechanical pump |
* Process Chamber heating function (360 oC) |
* RF Bias |