Reactive Sputtering

Some metals, such as nitrides and oxides, are best deposited by this method: the target is the parent metal and a small amount of nitrogen or oxygen is introduced into the process chamber along with the argon sputtering gas. Because ionized gases are typically highly reactive, a film deposited in a mixture of argon and a reactive gas will often form a compound with the reactive gas (e.g., a nitride or an oxide).