Etcher / RIE Selection and Configuration Form

Please provide the following process requirements and planning information. Based on your application requirements, Allwin21 will recommend a suitable plasma etcher model and configuration.

Contact Information

1. Your Name (Required):

2. Your Email (Required):

3. Company Name (Required):

4. Company Address:

Process Requirements

5. Application (Required):
Silicon Nitride EtchSilicon Dioxide EtchPolysilicon EtchMetal EtchDescumSurface TreatmentResearchProductionOtherNot Sure

6. Substrate Material:
SiSiCGaAsGaNGaInPInPOtherNot Sure

7. Substrate Size / Maximum Size (Required):
Small Sample2 inch3 inch4 inch5 inch6 inch8 inchOtherNot Sure

8. Substrate Thickness:
≤200 µm200–1000 µm>1000 µmNot Sure

9. Process Temperature Requirement (°C):

Minimum Temperature (°C):

Maximum Temperature (°C):

Not Sure

10. Process Gases (Please Specify):

11. Required Etch Rate (µm/min):

12. Required Uniformity (%):

13. Required Repeatability (%):

14. Current or Previous Plasma Etcher System (Manufacturer and Model):

Planning

15. Throughput Requirement:
R&D<5 wafers/day5–10 wafers/day10–20 wafers/day20–50 wafers/day>50 wafers/dayNot Sure

16. Approximate Budget:
< USD $50KUSD $50K–100KUSD $100K–200KUSD $200K–300KUSD $300K–400KUSD $400K–500K> USD $500KNot Sure

17. Approximate Purchase Timeline:
<1 month1–3 months3–6 months6–12 months>12 monthsNot Sure

18. Future Expansion Plan:

Additional Information

19. Please share any additional application details, challenges, previous experience, process concerns, or future plans that may help us better understand your requirements.

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