Archive | Article on Sputter Deposition

Process Chamber of Perkin Elmer 4400

 Process Chamber of  Perkin Elmer 4400  Sputter Deposition System

  • 28″ diameter X 12″ high stainless steel cylinder with 6″ CF flange viewport and load lock port
  • 28″ diameter stainless steel top plate.
  • 28″ diameter stainless steel base plate
  • 11/2” air-operated roughing isolation valve
  • Air-operated gas inlet valve
  • Air-operated vent valve
  • 11/2“blanked-off leak check port
  • Removable deposition shields
  • 23″ diameter, 3-position water-cooled annular substrate table with variable-speed motorized table drive
  • Full circle shutter with vane shutter
  • Chain drive pallet carrier transport
  • Heavy duty electric hoist

     

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Perkin-Elmer 4400-Series System Overview

Perkin-Elmer 4400-Series System -Production Sputtering Systems are manufactured in three (3) specific configurations, as follows:

MODEL 4400:

A manually-loaded system capable of limited automatic operation, but requiring manual selection of target and sputtering mode. The Model  4400 sputtering head is equipped with four (4) 8″ round cathode positions, one (1) of which may be fitted with an in-process heater fixture in place of a target (Mo shields, vane shutter, and full circle shutter.)

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Utilities and Dimension of AccuSputter AW 4450

Utilities and Dimension of  AccuSputter AW 4450 

  •         Rear-mounted electrical, water, gas and LN2 inlet panel
  •         Power distribution box
  •         Water flow switch panel and manifold
  •         DC or RF power supply: 208VAC, 60Hz, 3phases, 60A, 4 wires
  •         Vacuum system: 208VAC, 60Hz, 3phases, 60A, 5 wires
  •         Cooling Water: 1.8gpm3
  •         Process N2: 60-70 psi
  •         Process Argon: 5-10 psi
  •         CDA: 40-60 psi
  •         Dimension: 65″W x 46″D x 68″H
  •         Weight: 2,288 lbs
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Configuration of AccuSputter AW 4450

Configuration of  AccuSputter AW 4450

 
Model

AccuSputter AW 4450

Delta Cathode Configuration Circular Cathode Configuration
Basic System
Cathode Size Delta 8″ 6″ 5″ 4″ 3″ 2″ 14″
Cathode Port Amount 1 2 3 1 to 4 1 to 8 1
Sputter Type DC Magnetron RF Magnetron RF Diode Pulse DC
DC Power Supplier 1-10KW 1-5KW
RF Power Supplier 1-3KW 1-2KW
Substrate Size ~ 8 inch ~6inch ~4inch ~3inch ~3inch ~2inch ~1inch ~12inch
Wafer Load Manually load
Throughput per Batch 3/4/5/6/8″ Wafer Size: 30/14/10/8/5 pieces 3/4/5/6″ Wafer Size:30/14/10/8 pieces 12″/1
Sputter Rate 20 to 500 Angstroms/kw-min depending on different model, cathode, process, sputter material etc
Uniformity Capacity ±5%~7% ±7%~10%
Options

*  Turbo pump for load lock

*  Load lock heating function (200 oC)

*  RF Etch

*  Dry pump or mechanical pump

*  Process Chamber heating function (360 oC)

*  RF Bias

 

AccuSputter AW 4450 Sputter Deposition System

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